STMicroelectronics STDRIVEG600
STDRIVEG600 - High voltage half-bridge gate driver for GaN transistors
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.
The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.
The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
The STDRIVEG600 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.
Features
- dV/dt immunity ±200 V/ns
- Driver current capability:
- 1.3/2.4 A source/sink typ @ 25 °C, 6 V
- 5.5/6 A source/sink typ @ 25 °C, 15 V
- Separated turn on and turn off gate driver pins
- 45 ns propagation delay with tight matching
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Interlocking function
- UVLO on low-side and high-side sections
- Dedicated pin for shut down functionality
- Over temperature protection
EVSTDRIVEG600DG - Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with enhanced mode GaN HEMTs
The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.
The EVSTDRIVEG600DG board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 650 V e-Mode GaN switches.
It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.
The EVSTDRIVEG600DG is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.
Features
- Half-Bridge topology featuring 600V STDRIVEG600 gate driver
- Equipped with 150 mΩ 650V HEMT GaN
- GaN in 5x6mm PowerFLAT package with Kelvin source
- HV bus up to 500 V
- 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN VGS rating
- On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
- Separated inputs with external deadtime can also be used
- On-board 3.3V regulator for external circuitry supply
- 25°C/W junction-to-ambient thermal resistance to evaluate large power topologies
- High frequency connector for gate GaN power transistor monitoring
- Optional low-side shunt
- RoHS compliant.
EVSTDRIVEG600DM - Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with MDmesh DM2 Power MOSFET
The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.
The EVSTDRIVEG600DM board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 600V MDmesh DM2 Power MOSFET with fast recovery diode.
It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.
The EVSTDRIVEG600DM is 54 x 88 mm wide, FR-4 PCB resulting in 20 °C/W Rth(J‑A) in still air.
Features
- Half-Bridge topology featuring 600V STDRIVEG600 gate driver
- Equipped with 115 mΩ 600V MDmesh DM2 Power MOSFET STL33N60DM2 with fast recovery diode.
- MOSFET in PowerFLAT 8x8 HV package with Kelvin source or alternative DPAK footprint.
- HV bus up to 450V (capacitor rating limited)
- 4.75 to 20 V VCC gate driver supply voltage
- On-board adjustable deadtime generator to convert single PWM signal into independent high-side and low-side deadtimes.
- Separated inputs with external deadtime can also be used
- On-board 3.3V regulator for external circuitry supply
- 20°C/W junction-to-ambient thermal resistance to evaluate large power topologies
- Optional low-side shunt
- RoHS compliant.
silica content library/npi/2023/stmicroelectronics-stdriveg600
STMicroelectronics STDRIVEG600 half-bridge gate driver | Avnet Silica
