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STMicroelectronics SCTW35N65G2V

SCTW35N65G2V - Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package

STMicroelectronics’ SCTW35N65G2V Silicon carbide Power MOSFET – front side

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

 

Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200°C)

 

 

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