Microchip HPD510/HPD520 SiC Power Modules

Power Core Module

The power core module (PCM) combines hybrid power drive (HPD) with control/telemetry platform to create highly integrated solutions for high-reliability actuation and motor drive applications. Our customers use this platform with their control and health monitoring expertise, resulting in weight reduction for many critical applications.

Features

• PWM control and telemetry integrated with HPD
• LVDS interface
• Greater than 99% efficiency
• High frequency power switching
• 3-phase bridge topology
• SiC MOSFET or IGBT solutions

Benefits

• Highly integrated motor drive solution
• Qualified using DO-160 test standards
• Reduced weight and solution size
• Reduced system cost and shorter time to market

Hybrid Power Drive

The hybrid power drive (HPD) includes a three-phase power stage, drive and bias circuitry, and telemetry monitoring. The HPD is available in various configurations, power levels, and form factors.

Features 

• 540 V or 270 VDC operation
• Up to 20 kVA
• SiC MOSFET or IGBT-based solutions
• Various signal and power interface options
• Optional solenoid drive and regeneration capability
• Hall effect or shunt current sensing
• Integrated temperature sensing

Benefits

• Integrated gate drive and power stage
• Qualified using DO-160 test standards
• Leveraging 10M+ flight hours of power hybrid technology
• 100% partial discharge tested

Power Modules

Microsemi’s aerospace-grade power modules provide the capability to exponentially increase power density through hybrid integration.

Features

• AlSiC baseplate for enhanced thermal cycling
• DBC on AIN or AMB on Si3N4 substrate
• Aerospace grade silicone gel coating (–60°C to 125°C)
• Various power topology options available using SiC or IGBT
• Low profile, low inductance solutions

Benefits

• Improved reliability and thermal conductivity
• 40% lower weight
• High-speed switching capability

Rugged Next Generation Silicon Carbide (SiC) Components

Microsemi’s next-generation Silicon Carbide (SiC) semiconductors are designed for extreme ruggedness.

Features

• Schottky Barrier Diodes (SBD) and MOSFETs
  • 700 V, 1200 V, and 1700 V
• AEC-Q101 qualified
• Designed for Extreme Ruggedness
  • High repetitive unclamped inductive switching (UIS) rating
  • High short circuit rating 3 – 5 μs) for MOSFETs

Benefits

• Improved power density over IGBT Si solutions
• Higher efficiency and size reduction