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STMicroelectronics STO67N60DM6

STO67N60DM6 - N-channel 600 V, 48 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-LL package

STMicroeleSTMicroelectronics STO67N60DM6 - N-channel Power MOSFETctronics IMP23ABSU microphone - front and back side

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

 

Key features

  • Fast-recovery body diode
  • Lower RDS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin

 

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