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STMicroelectronics SCTWA90N65G2V-4

SCTWA90N65G2V-4 - Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

STMicroelectronics SCTWA90N65G2V-4 SiC Power MOSFET sample

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

 

Features

  • High speed switching performance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances
  • Source sensing pin for increased efficiency

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