3-phase 1200V SiC inverter reference design
Compared to IGBTs, SiC MOSFET can reduce switching loss dramatically due to shorter switching times and missing tail current. Also conduction loss is reduced in low and partial load situations, e.g. in servo drives and robotics.
Toshiba’s 3rd generation SiC MOSFET technology embeds a SiC Schottky Diode structure which reduces the conduction losses in the diode commutation phase and practically nullifies the RDS(ON) drifting effects of SiC Body Diodes of existing SiC MOSFETs in the market.
3rd Gen. SiC MOSFET
Toshiba's 3rd generation 1200V SiC MOSFETs
Our generation 1200V SiC MOSFETs boost industrial power-conversion efficiency. The new 1200V silicon-carbide (SiC) MOSFETs leverages proven SiC technology. By improving the on-resistance x gate-drain charge (RDS(on) x QGD) figure of merit by more than 80%, Toshiba’s latest SiC technology elevates both conduction and switching performance in power-conversion topologies.
In addition, the new devices contain the innovative embedded Schottky barrier diode (SBD), proven in the previous generation. The embedded SBD enhances the reliability of SiC MOSFETs by overcoming internal parasitic effects to maintain a stable device RDS(on).
Isolated Smart Gate drivers
For all drive inverter stage common power switch technologies, Toshiba offers suitable isolated Gate drivers: IGBTs, Si and SiC MOSFETs. Besides standard isolated Gate drivers with up to 5A (peak) rating, Smart Gate Drivers offer functions to protect the valuable power switches.
- Active Miller Clamping - reducing the risk of false turn-on in fast switching
- DESAT – protection from overcurrent
- Soft turn-off – preventing damage from too fast slopes in protection mode
- Fault feedback – to inform the controller of an activated protection feature
- Undervoltage lock-out – prevent damage from too low Gate voltage
For newer devices, the slow CMTI capability of opto-isolated Gate drives has been increased to min 50kV/µs and soon even faster. This allows Toshibas Smart Gate Drivers to utilize the advantages of Wide Bandgap switches like SiC MOSFETs.
Key products
- TLP5212 Non Rail-to-Rail 2.5A 5kVrms isolated Smart Gate Driver with Active Miller Clamping, DESAT, soft-off, and fault feedback
- TLP5222 Non Rail-to-Rail 2.5A 5kVrms isolated Smart Gate Driver with Active Miller Clamping, DESAT with automatic reset, soft-off, and fault feedback
- TLP5231 Rail-to-Rail separate output 2.5A 5kVrms isolated Smart Gate pre-Driver with Active Miller Clamping, DESAT, soft-off, and fault feedback for high-power applications
Multi-level inverter using 150V MOSFETs
The concept of Multi-Level inverters is well known from middle and high-voltage applications. In low voltage applications up to 1000Vrms and especially drives it is not so commonly used.
The classic two-level topology used here is sometimes extended to three-level which uses double the amount of switches with half the blocking voltage. The additional efforts of control and gate drive circuit are compensated by cheaper passive components and reduces EMI due to lower output dV/dt. Overall total efficiency and solution compactness is improved.
Toshiba is investigating in both three-level and five-level inverters. The latter has the advantage to make use of Toshiba’s brand new low resistance low voltage U-MOS X-H MOSFETs in 150V class which also feature an optimized body diode. In this both conduction losses, switching losses and diode recovery losses are minimized while reducing output dV/dt to one fourth.
The low losses and low blocking voltage of 150V allow for small 5x6mm² SMD MOSFET packages reducing the solution footprint.
Multi-Level topology advantages using LV MOSFETs vs conventional topology / switches:
- Reduced dV/dt
- Reduced switching losses
- Low conduction losses
Key products
| TPH9R00CQ5 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
Inverter Switch |
N-ch MOSFET, 150 V, 0.009 Ω@10V, Qrr=34nC@100A/μs, SOP Advance / SOP Advance(N), U-MOSⅩ-H |
| TLP152 |
Photocoupler (photo-IC output) |
MOSFET driver |
Photocoupler (photo-IC output), IGBT driver, IOP=+/-2.5 A, 3750 Vrms, 5pin SO6 |
| TRSxxx65H |
50V SiC Schottky Barrier Diode |
Multi-Level |
Low Irr and low Qc |
Servo drive reference model for multi-channel Motor Control
The servo drive reference model combines Toshiba’s optimized motor control MCUs with Toshiba’s low RDS(ON) power MOSFETs to provide highly efficient control and drive solutions for brushless DC (BLDC) motors. The modular concept offers a high degree of flexibility for the field-oriented control (FOC) and closed loop positioning of up to three BLDC servo motors with a single MCU. The reference model helps to reduce system cost and gives a quick start to the implementation of advanced servo motor systems.
Key products
Motor Control MCU
Multi-Channel Motor Control MCU
Arm® Cortex®-M4 32-bit 160MHz MCUs that are designed specifically to control brushless DC (BLDC) motors with sensor or sensorless FOC (Field Oriented Control). Up to 3 ADCs and 3 advanced Programmable Motor Control circuits (A-PMD), and an evolved Vector Engine "advanced Vector Engine plus (A-VE+)" are incorporated, enabling the control of up to 3 BLDC motors by a single MCU. The integrated high-resolution advanced encoder (A-ENC32) allows precise control of AC servo motors.
TXZ ™4A Series, M4K Group
MCU Motor studio
MCU Motor Studio features two main components, the PC Tool and the motor control firmware. The PC Tool allows motor parameter configuration, drive control, real-time logging and diagnostics via high-speed UART. The motor control firmware is scalable, fully configurable and supports the special motor functions of the Family Advanced Class TXZ+™ M4K Group and M3H Group. MCU Motor Studio together with the Clicker 4 MCU board and the Clicker 4 Inverter Shield from MikroElektronika (MIKROE) allows quick and easy MCU evaluation, BLDC motor application development and prototyping.
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Low voltage power MOSFET
Toshiba offers an extensive portfolio of 12 to 300 VDSS MOSFETs in various packages, ranging from ultra-small packages for small-signal applications to packages for large current applications. Toshiba's MOSFETs offer high-speed, low drain-source on-resistance characteristics and low-spike type with snubber constants optimized. Toshiba's MOSFETs with low noise and low switching loss are used for switched-mode power supplies.
Featured products
- TPH1R306PL1 60V 1.6mΩ UMOS-IX MOSFET in SOP ADV(N) package for 24V drives
- TPH2R408QM 80V 2.4mΩ UMOS-X MOSFET in SOP ADV(N) package for 48V drives
- TPN19008QM 80V 19mΩ UMOS-X MOSFET in TSON ADV package for 48V drives
- TPW3R70APL 100V 3.7mΩ UMOS-IX-H MOSFET in DSOP advanced package for 48V drive
Key products
Digital isolation
Toshiba Digital Isolators have low pulse distortion and high CMTI, which are required for isolation of high-speed signalling, and are applicable to a wide range of consumer and industrial applications. The isolation transformer circuit is able to offer a high CMTI by adopting the magnetic coupling method developed by Toshiba.
Key products
- DCL54xx01 4-ch 150 Mbps 5kV Digital Isolators with channel configuration options
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Thermoflagger™
Thermoflagger™* devices offer a simple and inexpensive, low current consumption solution capable of connecting to several PTC thermistors. The devices can be combined with positive temperature coefficient (PTC) thermistors to detect over-temperature conditions within electronic systems, in order to take countermeasures if necessary. Additional over-temperature protection solutions can be realized by combining Thermoflagger with general temperature sensor ICs.
As there is no programming involved, the design and safety certification process is simplified for the user. The device consists of various output and measurement current options.
Key product
- TCTH02xBE single-chip, multi-point overtemperature detector with external PTCs
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* Thermoflagger™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
