Toshiba Electronics Europe 1200V SiC MOSFETs

Toshiba's 3rd generation 1200V SiC MOSFETs boost industrial power-conversion efficiency. These five new 1200V silicon-carbide (SiC) MOSFETs leverages proven SiC technology. By improving the on-resistance x gate-drain charge (R_DS(on) x Q_GD) figure of merit by more than 80%, Toshiba’s latest SiC technology elevates both conduction and switching performance in power-conversion topologies.

In addition, the new devices contain the innovative embedded Schottky barrier diode (SBD), proven in the previous generation. The embedded SBD enhances the reliability of SiC MOSFETs by overcoming internal parasitic effects to maintain a stable device R_DS(on).

Key features

• Max gate-source voltage range of -10V to 25V
• R_DS(on) values from 15mΩ to 140mΩ (typical, at V_GS = 18V)
• Drain-current ratings from 20A to 100A (DC at TC=25°C)
• High gate threshold voltage (V_th: 3V(min) to 5V(max))

Additional features

Advantages

• R_DS(on) x Q_GD figure of merit improved by more than 80%
• Embedded SBD overcoming internal parasitic effects
• High gate threshold voltage, to prevent malfunction due to switching noise
   

Benefits

• Enhanced reliability and stability of R_DS(on) value
• Predictable switching performance with minimal drift permits a simple gate-driver design

Applications

• EV charging stations
• Photovoltaic inverters
• Industrial power supplies
• Uninterruptible power supplies (UPS)
• Bidirectional or half-bridge DC-DC converters