Vishay SISS32ADN-T1-UE3 - N-Channel 80 V (D-S) MOSFET

The Vishay SiSS32ADN is an 80 V N-channel power MOSFET built on Vishay’s advanced TrenchFET^® Gen IV technology, delivering an excellent balance of low on-resistance, low gate charge, and high switching efficiency. With an ultra-low R_DS(on) of 7.3 mΩ and a continuous drain current rating of up to 63 A, it enables high power density while minimizing conduction losses.

Optimized for both low R_DS(on)-Q_g and R_DS(on)-Q_oss figures of merit, the SiSS32ADN helps designers achieve higher efficiency in demanding power-conversion applications. Housed in the compact PowerPAK^® 1212-8S package, it supports fast switching performance and excellent thermal characteristics for space-constrained designs.

Typical applications include DC/DC converters, synchronous rectification, primary-side switching, motor drives, battery and load switches, and solar micro-inverters. Its robust design, including 100% R_g and UIS testing, makes it a reliable choice for industrial and power-management systems requiring high efficiency and long-term durability.

Key features

• TrenchFET^® Gen IV power MOSFET
• Very low R_DS - Q_g figure-of-merit (FOM)
• Tuned for the lowest R_DS - Q_oss FOM
• 100 % R_g and UIS tested

Applications

• Synchronous rectification
• Primary side switch
• DC/DC converter
• Solar micro inverter