Vishay SIR580DP-T1-UE3
SiR580DP‑T1‑UE3 is an N‑channel 80 V TrenchFET Gen V MOSFET in a PowerPAK SO‑8 package, offering very low RDS(on)&high current capability
The SiR580DP‑T1‑UE3 is a high‑performance N‑channel MOSFET designed by Vishay Siliconix for demanding power applications. It features an 80 V drain‑to‑source voltage rating and belongs to the TrenchFET® Gen V family, known for its exceptionally low RDS(on) and optimized switching efficiency. This makes it suitable for environments requiring high energy efficiency, robust thermal behavior, and compact power handling.
Key features
- TrenchFET® Gen V technology – Offers very low RDS(on) and excellent overall switching efficiency, improving power performance in demanding applications.
- High current capability – Supports continuous drain currents up to 146 A (TC), enabling use in high‑power and high‑density designs.
- Low On‑resistance – Provides an RDS(on) as low as 2.7 mΩ at 10 V, significantly reducing conduction losses for efficient power conversion.
- Robust PowerPAK® SO‑8 package – Ensures strong thermal performance and reliable surface‑mount capability, with full Rg and UIS testing for rugged operation.
Applications
- Synchronous rectification
- DC/DC converters
- Motor drive control
- Battery management systems
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