Vishay SIR540xDP

The Vishay Siliconix SiR5402DP, SiR5404DP, SiR5406DP, and SiR5408DP are new 40 V TrenchFET^® Gen IV n-channel power MOSFETs designed for demanding motor control and power conversion applications. Housed in the compact PowerPAK^® SO-8 package, these devices combine ultra-low on-resistance with optimized switching performance for higher efficiency and improved system reliability.

Engineered specifically for noisy switching environments, the MOSFETs feature a high minimum gate-source threshold voltage of 2.5 V and Q_gd/Q_gs ratios below 1. These characteristics help prevent false turn-on events, reduce gate-induced voltage fluctuations, and minimize the risk of shoot-through in motor drive and synchronous switching circuits.

The new devices are ideal for BLDC motor drives, power tools, drones, automation equipment, synchronous rectification, and DC/DC converters. With typical R_DS(on) values as low as 0.9 mΩ and 100% RG and UIS testing, they deliver robust performance, high efficiency, and reliable operation in challenging power management applications.

Key features

• Offered in the 6.15 mm by 5.15 mm PowerPAK^® SO-8 single package
• High minimum gate-source threshold voltage > 2.5 V avoids false trigger signals
• Optimized Q_gd / Q_gs ratios < 1 reduce gate induced-voltage fluctuations
• Available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V

Applications

• Synchronous rectification and DC/DC conversion
• Half bridge
• Full bridge
• Power tools, drones, and automation systems