onsemi UJ4SC075018L8S | Silicon Carbide (SiC) Cascode JFET

The UJ4SC075018L8S is a 750 V, 18 m G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving H-PDSO-F8 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Key features

• On-Resistance R_DS(on): 18 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery: Q_rr = 128 nC
• Low gate charge: Q_G = 37.8 nC
• Low body diode V_FSD: 1.14 V
• Threshold voltage V_G(th): 4.8 V (typ) allowing 0 to 15 V drive
• Low intrinsic capacitance
• ESD protected: HBM Class 2
• H-PDSO-F8 package for faster switching, clean gate waveforms

Applications

• Solid state relays and circuit-breakers
• Line rectification and active-bridge rectification circuits in AC-DC front-ends
• EV Charging
• PV Inverters
• Switch mode power supplies
• Power factor correction modules
• Motor drives
• Induction heating