onsemi UG3SC120009K4S | Silicon Carbide (SiC) Combo JFET

onsemi’s UG3SC120009K4S “Combo-FET” integrates both a 1200 V SiC JFET and a Low Voltage Si MOSFET into a single TO247-4 package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (R_DS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.

Key features

• Single digit R_DS(on)
• Normally-off capability
• Improved speed control
• Improved parallel device operation (3+ FETs)
• Operating temperature: 175 °C (Max)
• High pulse current capability
• Excellent device robustness
• Silver-sintered die attach for excellent thermal resistance
• This device is Pb-Free, Halogen Free and is RoHS compliant

Applications

• Solid state / Semiconductor circuit breaker
• Solid state / Semiconductor relay
• Battery disconnects
• Surge protection
• Inrush current control
• High power switch mode converters (>25 kW)