Nexperia AEC-Q101 Qualified GaN FET GANE011-080CBA

The GANE011-080CBA​​ is a a general purpose 80 V, 11 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance and very low on-state resistance. It passes AEC-Q101 qualification.

Key features

• Enhancement mode - normally-off power switch
• Ultra high frequency switching capability
• No body diode
• Low gate charge, low output charge
• Tested to AEC-Q101 standard
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Wafer Level Chip-Scale Package (WLCSP) 1.5 mm x 1.5 mm

Applications

• LiDAR application
• Class-D audio amplifier
• High power density and high switching frequency DC-to-DC converters
• AC-to-DC converters (secondary stage)
• High intensity headlamps
• Motor drives