Nexperia 650V High-Power GaN FETs
Superior reliability and performance with cascode GaN technology
Nexperia's 650V high-power GaN FETs are normally-off devices that combines the latest high-voltage GaN HEMT technology and low-voltage silicon MOSFET - offering superior reliability and performance.
Package options include TOLT, TOLL and TO-247-4L.
Key features
- Simplified driver design as standard MOSFET gate drivers can be used:
- 0 V to 10 or 12 V drive voltage
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage for gate bounce immunity
- Low body diode VF for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
Applications
- Data center and telecom power supplies (1–12 kW PSU, AC-DC and DC-DC)
- Renewable energy power conversion (PV inverters and auxiliary supplies)
- Battery Energy Storage Systems (BESS)
- Industrial motor drives and automation power
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
Related documents |