Nexperia 1200 V SiC Schottky Diodes
Enhancing energy efficiency across power supplies, battery charging and solar inverters
Nexperia’s leading edge Silicon Carbide (SiC) Schottky barrier diodes are designed for ultra-high performance, low loss and high efficiency power conversion applications.
The 1200 V device family is available in industry standard package options (including bare die). SiC Schottky diodes benefit from temperature independent capacitive turn-off and zero recovery switching behavior, combined with an outstanding figure-of-merit (Qc x VF). The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.
Key features
- Zero forward and reverse recovery
- Temperature independent switching performance
- Fast and smooth switching performance
- High IFSM capability
- Low leakage current
- Easy to parallel / positive temperature coefficient
- Outstanding figure-of-merit (Qc x VF)
- Thermal stability up to 175 °C junction temperature
Applications
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converters
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Hybrid solar inverter
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