iCuTech iCu600MB12I2
1200 V SiC half-bridge module with 2,85 mΩ RDS(on) for efficient inverter, converter, and energy storage applications
The iCu600MB12I2 differentiates through patented laser welding and D2M architecture—eliminating solder, enabling robust Cu–Cu connections, higher reliability and greater design flexibility than conventional modules.Silicon Carbide Mosfet Half Bridge based on latest qualified discrete components from Infineon.
Designed for engineers looking for a compact, efficient 1200 V SiC half-bridge, the iCu600MB12I2 combines low conduction losses with a robust module architecture.
Key features
- VDSS = 1200 V
- ID Nominal = 600 A
- RDS(on) = 2.85 mΩ at VGS = 18V, Tvj = 25 °C
- Very low switching losses
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage VGS(th)=4.2 V
- Integrated temperature sensor
- Insulation: 2,5 kV AC, 1 min.
- Industry standard design
- High performance IMS/IMB copper baseplate
Applications
- Motor drives
- EV chargers
- Photovoltaic, solar
- Wind power
- AC inverters
- High frequency power supplies induction heating
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