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Micron LPDDR4/LPDDR4X SDRAM

Micron LPDDR4/LPDDR4X: Optimized specifically to address power consumption issues in automotive, industrial and consumer applications

LPDDR are DRAM devices optimized specifically to address the power consumption issues in battery-operated applications. It was originally developed for handsets and ultra-portables.

Some of the reasons you would use LPDDR over other options are:

Performance: peak bandwidth 33% faster compared to DDR4
Optimization: x32 configuration offers BOM savings for certain low density applications
Power Consumption: 5 times lower power consumption in standby mode compared to standard DRAM
Space, form factor, weight: MCP (Multi chip package) and PoP (package-on-package) designs save PCB Space

Key features

Densities: 4 Gb to 128 Gb - Provides flexibility for a variety of applications
Configurations: x16, x32, x64 - Enables fewer components to support wide bus architect.
Core voltages: 0.6 V, 1.1 V - Helps reduce power consumption
Temperature ranges: –40 ˚C to +95 ˚C IT, –40 ˚C to +105 ˚C AT, –40 ˚C to +125 ˚C UT

Additional features

Configurations: x32, (2 channels, x16), x64 (4 channels, x16) - Enables the use of fewer components to support wide bus architectures.
Core voltages: 0.6 V, 1.1 V - Helps reduce power consumption, a key advantage over standard DRAM.
Clock frequencies: up to 2133 MHz - Provides high performance, high bandwidth, and low power consumption.
Power consumption - Delivers low power consumption in standby and active modes, plus special mobile features to reduce power for a more efficient design (refer to datasheet for details).

Special features:

Temperature-compensated self-refresh (TCSR) - Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
Partial-array self-refresh (PASR) - Reduces power by refreshing only critical data
Deep power-down (DPD) - Provides an ultra-low power state when data retention is not required
Programmable drive strength (DS) - Enables adjustment for operation in point-to-point and point-to-2-point applications
Programmable VOH signal level - Enables adjustment for operation in point-to-point and point-to-2-point applications
Temperature ranges - Enables high performance in extreme environments: -40 ˚C to +95 ˚C (IT) -40 ˚C to +105 ˚C (AT) -40 ˚C to +125 ˚C (UT Ultra2)
Packages PoP - Saves board space by enabling a Mobile LPDRAM to be stacked on top of a processor so that the two components require only one footprint on the board
Known good die (KGD) - Supports bare die with edge bond pads for easy stacking in SIP and MCP solutions
FBGA - Supports JEDEC-standard FBGA ballout