Broadcom: Driving SiC & GaN Power Switches with Advanced Optocouplers

Online, On Demand

Live presentation date: May 20, 2021

​Overview

Broadcom® gate drive optocouplers are used extensively to drive silicon-based power switches like IGBTs. Optocouplers provide reinforced galvanic insulation between the control circuits from the high voltage at the power switch. Today, Broadcom´s next generation of gate drive optocouplers can also be used to drive and protect SiC and GaN power switches.

This webinar will cover how to drive 1,200 V SiC modules as well as discrete SiC and GaN switches. The presentation will focus on smart and basic gate drive optocouplers that feature 10 A peak output current to drive the SiC and GaN directly.

The smart gate driver ACPL-355JC comes with short circuit protection and fault feedback. The basic gate drivers are available in single channel, ACFL-3161 and dual channel ACFJ-3262. All gate drivers are able to withstand more than 100 kV/us of noise immunity (dv/dt). They have a fast switching speed of less than 100 ns which make them suitable for high frequency operation of the SiC or GaN power switches.

The SiC and GaN switches that will be discussed in this webinar includes Infineon CoolSiCTM in Easy1B module, STM STSiC in TO-247 Discretes and Nexperia GaN FET in CCPAK1212 Discretes. BUS voltage and current measurements using analog and digital Sigma-Delta modulators will also be presented.

Key Takeaways

• Broadcom optocouplers and portfolio
• SiC & GaN Power Devices - Properties and Benefits
• Infineon CoolSiCTM EasyDUAL Module Driver Board
• STM STI SiC Half Bridge Evaluation Board
• Nexperia GaN FET Half Bridge Evaluation Board

Speaker

Tee Chun Keong, Marketing Product Manager, Isolation Products Division, Broadcom Inc.

REGISTER NOW