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Nexperia GaN FETs

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When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. These devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. A substantially lower switching figure of merit (RDS(on) x QGD) and reverse recovery charge (Qrr), enable the high switching frequencies while delivering lower dissipation and more efficient power conversion.

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We are giving away 100 of our Power GaN FETs, so don't miss out and register now. All information about the products can be found under the register form. Do you have any questions? Don't hesitate to contact our EBV specialists.

Featured applications:

Solar Inverters
High efficiency and high-power density power supplies
Servo Drives
Battery Chargers

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GAN063-650WSA - Power GaN FET 650 V
Buy now	V_DS	650 V
	V_GS(th) typ	3.9 V
	R_DS(on) max	60 mΩ
	R_DS(on) typ	50 mΩ
	Package	TO-247 (SOT429)
	E_OSS	15 μJ @ 400 V
	Q_rr	125 nC @ 400 V -1000 A/μS

GAN041-650WSB - 2nd generation Power GaN FET 650 V
	V_DS	650 V
	V_GS(th) typ	3.9 V
	R_DS(on) max	41 mΩ
	R_DS(on) typ	35 mΩ
	Package	TO-247 (SOT429)
	E_OSS	17 μJ @ 400 V
	Q_rr	150 nC @ 400 V -1000 A/μS

Features and benefits

Easy gate drive, low R_DS(on) fast switching
Excellent body diode (Low Vf), low Q_rr
High ruggedness
Low dynamic R_DS(on)
Stable switching
Rugged gate bounce immunity (Vth ~ 4 V)

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Gallium Nitride (GaN)

When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. Our devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. With the development of CCPAK, our high-performance and robust technology gets ready to pave the way in HV package innovation.

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4 kW AC/DC 1-Phase
GaN based Bridgeless Totem-pole PFC converter

To learn more about

Principle of operation and operating conditions
Efficiency & EMC tests

Watch the Demo Video below!

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Video

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MOSFET & GaN FET Application Handbook

A Power Design Engineer’s Guide – Get your free copy now!

Written by engineers – for engineers - we share expertise and learnings that our engineering teams have built up over many years of helping customers in a variety of sectors take their applications from initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs – including information necessary to solve common problems and avoid potential pitfalls – our belief is that the Handbook will become a ‘go-to’ reference for anybody tasked with delivering optimized power and small-signal switching, power conversion and power management.

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