Extensive power portfolio: Nexperia is a prominent player in the semiconductor industry, known for its high-quality and reliable discrete components, power, and logic ICs. The company is dedicated to innovation, continuously expanding its portfolio with a focus on power MOSFETs, wideband gap semiconductors, IGBTs, and analog & power management ICs. Each year, Nexperia introduces over 800 new types, with more than 70 new parts in analog & power management released in 2024 alone.
Significant investiments and strategic partnerships: Among others, Nexperia has committed $200 million to SiC and GaN technology at its Hamburg factory, enhancing production capabilities and meeting future demands. Strategic partnerships boost the technological development and adoption in key applications. Headquartered in the Netherlands, Nexperia is a global semiconductor company with a rich European history and over 12,500 employees across Europe, Asia, and the United States. Shipping more than 100 billion products annually, Nexperia maintains a strong global presence, ensuring robust support and efficient supply chain management.
SiC
SiC MOSFETs: Superior Reliability and Efficiency for High-Power Industrial Applications
SiC MOSFETs set new standards for safe, robust, and reliable power switching in high-power, high-voltage industrial applications. They deliver excellent RDS(on) temperature stability, fast switching, and high short-circuit durability, along with superior gate charge characteristics for low driver power consumption and strong immunity to parasitic turn-on. With tight threshold voltage tolerance, a robust low-voltage body diode, and minimal leakage up to 1200 V, these devices ensure efficient, dependable performance in demanding environments.
X.PAK Package: High Thermal Performance, Compact Size, Easy Assembly for High-Power Applications
Nexperia's robust, efficient 1200 V SiC MOSFETs in X.PAK SMD package combine SMD assembly benefits with top-side cooling for optimal heat dissipation. The form factor of 14 mm x 18.5 mm is compact. The package delivers a class-leading figures-of-merit (FoM), with RDS(on) being a particularly critical parameter due to its impact on conduction power losses.
The temperature stability is industry-leading, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C - far less than typical devices - minimizing conduction losses and ensuring exceptional thermal performance for high-power industrial applications.
Learn More
Resources
- Campaign page: Nexperia Silicon Carbide (SiC) MOSFETs
- Application note: Understanding of critical SiC parameters for efficient and stable designs
- Application note: X.PAK SiC MOSFETs: A technical guide
- Leaflet: SiC MOSFETs