Extensive power portfolio: Nexperia is a prominent player in the semiconductor industry, known for its high-quality and reliable discrete components, power, and logic ICs. The company is dedicated to innovation, continuously expanding its portfolio with a focus on power MOSFETs, wideband gap semiconductors, IGBTs, and analog & power management ICs. Each year, Nexperia introduces over 800 new types, with more than 70 new parts in analog & power management released in 2024 alone.
Significant investiments and strategic partnerships: Among others, Nexperia has committed $200 million to SiC and GaN technology at its Hamburg factory, enhancing production capabilities and meeting future demands. Strategic partnerships boost the technological development and adoption in key applications. Headquartered in the Netherlands, Nexperia is a global semiconductor company with a rich European history and over 12,500 employees across Europe, Asia, and the United States. Shipping more than 100 billion products annually, Nexperia maintains a strong global presence, ensuring robust support and efficient supply chain management.
GaN
Power GaN FETs: Fast, Efficient, and Compact Solutions for Modern Power Conversion
Power GaN FETs deliver industry-leading switching speed and efficiency for both low- and high-power applications. Nexperia’s portfolio includes cascode GaN FETs for high-voltage, high-power needs and e-mode GaN FETs for industrial and consumer use, as well as 40V bi-directional options for advanced battery management. These devices ensure low conduction losses, ultra-fast switching speeds, and significant space savings with their compact footprint.
Cascode GaN FET - Bridging the Transition to GaN Technology
Cascode topology comprises a GaN high-electron-mobility transistor (HEMT) combined with a low-voltage silicon MOSFET in a single package. Leveraging the MOSFET’s gate control while benefiting from the GaN HEMT’s fast switching and low losses, delivers highly reliable operation for high-voltage, high-power applications. And by maintaining compatibility with existing silicon MOSFET designs, cascode GaN devices facilitate a gradual transition for power systems upgrading to GaN technology. This is particularly suitable in high-voltage high-power applications.
E-mode GAN FET - Easing the Move to Mainstream
Enhancement mode GaN FETs are inherently normally-off devices and flexible enough to address a much wider range of applications – from high-voltage, low-mid power to both low- and high-power at lower voltages. Enabling simple, more compact designs, e-mode GaN transistors achieve unparalleled energy efficiency in terms of both power and footprint for a host of different applications.
Resources
- Campaign page: Nexperia GaN FETs
- Application note: Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs
- Application note: Gate drive circuit design for Nexperia 650 V Enhancementmode (e-mode) GaN FETs
- Leaflet: Power Gallium Nitride (GaN) FETs
MOSFET and GaN FET Application Handbook: Power Design Engineers Guide
This unique collection of technical materials and application notes offers essential, up-to-date guidance for integrating MOSFETs and GaN FETs into real-world systems. The Nexperia Handbook is your go-to reference for solving design challenges and optimizing power and small-signal switching.