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Infineon Switches & Drivers

EBV - Infineon Switches and Drivers - Gallium Nitride technology (SN)

EBV - Infineon Switches and Drivers - Gallium Nitride Technology (LC)

Switches & drivers based on Gallium nitride technology

CoolGaN™ 600 V e-mode HEMTs - highest efficiency & density levels in SMPS

With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor-made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application-based qualification approach extends beyond that of other GaN products in the market.

The e-mode (normally-off) concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its e-mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs.

GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. This enables more efficient operation at existing frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in³ for 3.6 kW LLC with >98% efficiency).

Image of Gallium Nitride Technology diagram The CoolGaN™ portfolio is built around high performing SMD packages with lower parasitics and good thermal performance to fully exploit the benefits of GaN both, for bottom-side cooling (DSO-20-85) and top-side cooling (DSO-20-87). By offering a full SMD package series Infineon aims to support high frequency operations.

Infineon’s qualification plan for its GaN switches follows a dedicated approach well beyond Si standards (e.g. JEDEC), thereby setting the next level of wide bandgap quality. Application profiles (including most stringent and challenging applications requiring more than 15 years lifetime, e.g. server / telecom) are an integral part of the qualification. Failure models – based on accelerated test conditions – ensure that in the field a target lifetime and quality are met.

Target applications: servers, data centers, telecom, wireless charging, chargers, adapters

Key features

Key benefits

Best FOM of 600 V power devices
Excellent for hard and soft switching topologies
Optimized for turn-on and turn-off
Zero reverse recovery charge
The cutting-edge technology for innovative solutions and high volumes

Compared to Si technology:

10x higher breakdown field and 2x higher mobility
10x lower output charge
10x lower gate charge and linear C_oss characteristic

Highest efficiency for SMPS; excellent efficiency in resonant circuits
Highest power density enables small and light designs
Surface mount (SMD) packaging ensures that switching capabilities of GaN are fully accessed
Easy-to-use thanks to a compelling driver IC portfolio
Very low R_DS(on) and large cost-down potential
New topologies and current modulation
Fast (and nearly lossless) switching

CoolGaN™ 600 V e-mode HEMTs product portfolio

Table

R_{DS(on) max.}	DSO-20-85 Bottom-side cooling	DSO-20-87 Top-side cooling	HSOF-8-3 (TO-leadless)	DFN 8x8
35 mΩ	IGO60R035D1**	IGOT60R035D1**	IGT60R035D1**
70 mΩ	IGO60R070D1 Download Datasheet	IGOT60R070D1 Download Datasheet	IGT60R070D1 Download Datasheet	IGLD60R070D1 Download Datasheet
190 mΩ			IGT60R190D1S* Download Datasheet	IGLD60R190D1**
190 mΩ			IGT60R190D1**
340 mΩ				IGLD60R340D1**

* Standard grade
** Coming soon

GaN EiceDRIVER™ ICs - 1-channel galvanically-isolated gate drivers for enhancement mode GaN HEMTs

EBV - Infineon Switches and Drivers- GaN EiceDRIVER ICs (MM)

Every high-voltage GaN switch needs a dedicated driver IC to benefit from:

negative gate-driver voltage -> protection against spurious turn-on
two off-voltage levels -> least dead-time losses
excellent timing accuracy -> best system efficiency
constant switching transients -> least R&D effort
best robustness

Infineon’s newly launched CoolGaN™ switches portfolio is easy-to-use thanks to a perfectly matching gate driver IC portfolio. By introducing the GaN EiceDRIVER™ family Infineon extends its range of one-channel galvanically-isolated gate driver ICs. The new components with high gate current for fast turn-on and robust gate-drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage. Resulting, driver complexity has been significantly reduced (medium effort for design-in) as no more customized drivers are needed.

Target applications: high-voltage bridgeless totem-pole PFC stages and high-voltage resonant LLC stages in telecom and server SMPS, data centers, active clamping flybacks in AC adapters, chargers, three-phase motor drives, Class E wireless charging, Class D audio amplifiers

EBV - Infineon Switches and Drivers- GaN EiceDRIVER™ ICs Table

Key features

Key benefits

Isolated gate-driving
Output impedance:
R_DS(on) source - 0.85 Ω
R_DS(on) sink - 0.35 Ω
Input-output propagation delay accuracy: +/- 5 ns
CMTI: > 150 V/ns
Package:
1EDF5673K: 5x5 mm LGA 13-pin
1EDF5673F: 16-pin DSO 150 mil
1EDS5663H: 300 mil DSO 16-pin
Placement:
Totem-pole PFC
Resonant LLC
Pace: 18 ns minimum output pulse-width
Precision: 13 ns propagation delay window
Negative gate drive voltage for the 1^st pulse

Complete support of all requirements specific to enhancement GaN HEMTs operation
Switching behavior independent from duty cycle
Integrated galvanic isolation for
High power density of the application design
Excellent system-level timing accuracy
Robust common mode transient immunity (CMTI)

EBV- Infineon Switches and Drivers - 1EDF5673 and 1EDS5663H use case (SH)

High-efficiency GaN switched mode power supply (SMPS) - 1EDF5673 and 1EDS5663H use case

Image of 1EDF5673 and 1EDS5663H use case

Click here to enlarge image

GaN EiceDRIVER™ ICs product portfolio - Isolation class determines packages

EBV - Infineon Switches and Drivers - GaN EiceDRIVER Table

			Input to output Isolation
	Datasheets	Package	Isolation class	Rating	Surge testing	Certification	Propagation delay accuracy	Typ. high level (sourcing) output resistance	Typ. low level (sinking) output resistance
1EDF5673K	1EDF5673K Datasheet	13-pin LGA 5x5 mm	functional	V_IO = 1.5kV_DC	n.a.	n.a.	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm
1EDF5673F	1EDF5673F Datasheet	16-pin DSO 150 mil	functional	V_IO = 1.5kV_DC	n.a.	n.a.	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm
1EDS5663H	1EDS5663H Datasheet	16-pin DSO 300 mil	reinforced	V_IOTM = 8 kVpk V_ISO = 5.7kV_rms	V_ISOM > 10kV_pk	VDE0884-10, UL1577	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm

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