Toshiba Electronics Europe TLP5222

Smart gate driver photocoupler with automatic recovery function for MOSFETs and IGBTs

The TLP5222 continuously monitors the MOSFET drain-source voltage (VDS) or IGBT collector-emitter voltage (VCE).

If an overcurrent occurs, the driver’s built-in protection circuitry detects the associated rise in VDS or VCE and gently turns off the MOSFET or IGBT. To prevent overcurrent misdetection, an additional  filter is integrated.

The driver’s automatic recovery function resumes normal operation, typically 25.5μs after protective turn-off is triggered, which helps simplify the design of the power-stage controller. An isolated FAULT status pin indicates detection of the abnormal overcurrent.

 

Key features

• Totem pole output with two N-channel MOSFETs
• Sink or source up to 2.5A
• Propagation delay of just 250 ns (max.)
• Miller Clamping

 

Additional features

Advantages

• Suitable for use in high-speed applications
• Operating temperature range -40°C to +110°C
• SO16L package with 8mm creepage for use in space-limited applications
   

Benefits

• Enables space saving and reduces system costs by integrated protection functions
• Suitable for applications requiring high levels of safety isolation and insulation (BV_s = 5000Vrms)

 

Applications

• Inverters
• AC servo drives
• Photovoltaic (PV)
• Uninterruptible Power Supplies (UPSs)

ebv content library/npi/2022/toshiba-electronics-europe-tlp5222 Toshiba Electronics Europe TLP5222 | EBV Elektronik