Toshiba Electronics Europe High Voltage MOSFETs (650V)
TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z
Toshiba has added a further four N-channel super junction 650 V power MOSFET devices to extend their DTMOSVI series.
The new TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs has reduced the figure of merit “drain-source On-resistance x gate-drain charge” by about 40 % compared to the current generation DTMOSIV-H series. This will translate into a substantial decrease in switching losses over earlier devices. As a result, designs incorporating the new devices will see an increase in efficiency. The performance enhancement will apply to new designs as well as upgrades of existing designs.
Key features
- Very low Qgd
- Excellent FOM: R(on)* Qgd product
- Compact through hole device
- Low switching loss
Additional features
Advantages
- Combination of lower conduction + switching losses
- Higher efficiency switching allows lower heat generation and smaller form factor
Benefits
- Lowest losses of DTMOS series
- Efficiency increase at power supplies
- Smaller form factor can, help to reduce costs
Applications
- Switching power supply for industrial equipment
- Data center (server, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
ebv content library/npi/2022/toshiba-electronics-europe-high-voltage-mosfets-650v
Toshiba Electronics Europe High Voltage MOSFETs (650V) | EBV Elektronik
