Toshiba Electronics Europe 650V SiC MOSFETs

TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C

3rd generation 650V silicon carbide (SiC) MOSFETs will enhance efficiency and reduce size.

The new TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based upon Toshiba’s advanced third generation SiC process which optimizes the cell structures used in second-generation devices.

As a result of this advancement, a key figure of merit (FoM) calculated as the product of drain-source on-resistance (R_DS(on)) and gate-drain charge (Q_g) to represent both static and dynamic losses has improved by about 80%. This significantly reduces losses and allows power solutions with higher power densities and lower running costs to be developed.

 

Key features

• Max gate-source voltage range of -10V to 25V
• Drain-Source current ratings from 20A to 100A (DC at TC=25°C)
• RDS(on) values from 15mΩ to 107mΩ (typical, at V_GS = 18V)
• Standard TO-247 package

 

Additional features

Advantages

• R_DS(on) x Q_GD figure of merit improved by more than 80%
• Embedded Schottky Barrier Diode overcoming internal parasitic effects
• High gate threshold voltage, to prevent malfunction due to switching noise
   

Benefits

• Enhanced reliability and stability of R_DS(on) value
• Supports higher power density and lower running costs

 

Applications

• Switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPSs)
• Photovoltaic (PV) inverters
• Bi-directional DC-DC converters
• EV charging (non-AEC-Q101)

ebv content library/npi/2022/toshiba-electronics-europe-650v-sic-mosfets Toshiba Electronics Europe 650V SiC MOSFETs | EBV Elektronik