Vishay 650 V SiC Schottky diodes
New 650 V SiC Schottky diodes increase efficiency for high frequency applications
Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices are designed to increase the efficiency of high-frequency applications by reducing switching losses, regardless of the effects from temperature variances - allowing the devices to operate at higher temperatures.
Key features
- Featuring a merged PIN Schottky (MPS) design
- Available with current ratings from 4 A to 40 A
- Offered in the 2L TO-220AC and TO-247AD 3L packages
- Provide high temperature operation to +175 C
Additional features
- Virtually zero reverse recovery losses, invariant with temperature and working condition
- Purely capacitive switching, no losses inside the diode
- Good current surge
- High ratio between the forward current and diode capacitance
- Low leakage at high temperature
- Low induced losses in the active switch
- Improved EMI
Applications
- PFC and out rectification in flyback PSUs and LLC converters
- Telecom equipment
- Solar inverters
Vishay SiC Diodes
The Vishay SiC portfolio covers the most common current rating from small to large. All devices have breakdown voltages of 650 V and a maximum TJ of 175 °C. The packages available are 2L TO-220AC single-diode or TO-247AD 3L dual common cathode configurations.
Available tools
ebv content library/npi/2021/vishay-650-v-sic-schottky-diodes
Vishay 650 V SiC Schottky Diodes | EBV Elektronik
