onsemi EliteSiC MOSFETS series of 1200 V and 900 V

EliteSiC Technology has a better thermal conductivity (3x) and a higher breakdown field strength (10x) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency and low on-resistance at a device level. Benefits for systems employing EliteSiC devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.

Key features

• 1200 V and 900 V Rated
• Typicall R_DS(ON) from 20 mΩ to 160 mΩ
• D2PAK and TO247 Packages
• Industrial and Automotive Grade (AEC−Q101 Qualified, and PPAB Capable)

Additional features

• Superior characteristics over conventional Si technology
• D2PAK 7-lead package
• TO247 package with 3 or 4 leads
• 100% UIL Tested
• Pb-Free and RoHS Compliant

Applications

• DC/DC Converter
• PFC Boost Inverter
• Power Supply
• PV Photovoltaic Inverter and Charging

EliteSiC MOSFET Devices