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STMicroelectronics MDmesh™ M6 and DM6 series MOSFETs

Combining low gate charge (Qg) and optimized capacitance profile, the MDmesh™ M6 series of super-junction high-voltage MOSFETs is today's reference for resonant topologies

Combining low gate charge (Qg) and optimized capacitance profile, the MDmesh™ M6 series of super-junction high-voltage MOSFETs is today's reference for resonant topologies. This new super-junction MDmesh™ M6 series opens the door to power converter designers for new scenarios targeting high efficiency and power density.

With a breakdown voltage ranging from 600 V to 700 V, MDmesh™ M6 power MOSFETs are available in a wide range of package options.

The MDmesh™ DM6 includes a fast recovery diode, optimized for full-bridge phase-shifted ZVS topologies improving efficiency and system reliability.

Key features

Extremely low Qg and Optimized Capacitance Profile for Light Load Conditions
Extremely High Efficiency Performance to Increase Power Density
Higher Operation Frequencies and Better Thermal Management
Wide Product and Package Portfolio - Thru-hole and SMD

Additional features

Optimized threshold voltage for soft switching
Good switching behavior for hard and soft switching
Low gate charge for operation at high frequencies
Capacitance profiles and threshold voltage optimized to target high efficiency on new topologies in power conversion applications
Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
Higher dV/dt capability for improved system reliability
AEC-Q101 qualified 600 V and 650 V fast recovery MOSFETs for automotive applications