Nexperia GAN063-650WSA power gallium nitride (GaN) FETs
GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride FET in the industry recognizable TO-247 package
GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride FET in the industry recognizable TO-247 package. Whether designing on-board charging systems and inverter drive for the next generation of battery-electric vehicles or a power supply for the latest 5G telecommunication network, Nexperia’s GaN FETs will be key to your solution. Nexperia’s GaN technology offers superior reliability, high efficiency and simplified driver requirements with industry-standard gate drive voltages.
Key features
- VDS: 650 V
- Threshold voltage: +4 V
- Transient over-voltage capability VDS: 800 V
- VGS range: ±20 V
Additional features
- RDS(ON) Max: 60 mΩ
- Package: TO-247 (SOT429)
- Easy to drive
- Drive voltages of 0 to +10 V or 12 V for drive, and 4 V threshold
- Inherently safe against parasitic turn-on
- Reduced losses in reverse conduction mode (very low source-drain voltage in reverse conduction mode)
- Ultra-low Qrr for fast switching
- Transient over-voltage capability
- Robust gate oxide
Applications
- On-Board-Chargers (OBC)
- DC/DC Power Conversion
- Battery Storage & UPS
- Industrial Automation
- Server & Telecom Power Supplies
- Traction Inverter
- Totem Pole PFC
- ZVS DC-DC
- Multiphase inverters
ebv content library/npi/2019/nexperia-gan063-650wsa
Nexperia GAN063-650WSA Power (GaN) FETs | EBV Elektronik
