onsemi NCP51705 EliteSiC MOSFET driver, single 6 A high-speed

The NCP51705 can utilize its on−board charge pump to generate a selectable negative voltage rail

The NCP51705 driver is designed to primarily drive EliteSiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the EliteSiC MOSFET. By providing high peak current during turn−on and turn−off, switching losses are minimized. For improved reliability, dV/dt immunity and fast turn−off, the NCP51705 can utilize its on−board charge pump to generate a selectable negative voltage rail. For isolated applications the NCP51705 provides an 5 V rail to power the secondary side of digital or high speed opto isolators.

 

Key features

• High Peak Output Current with Split Output Stages
• Extended Positive Voltage Rating up to 28 V Max
• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
• Adjustable Under−Voltage Lockout

     

Additional features

• High Peak Output Current with Split Output Stages
• Extended Positive Voltage Rating up to 28 V Max
• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
• Accessible 5 V Reference / Bias Rail
• Adjustable Under−Voltage Lockout
• Fast Desaturation Function
• QFN24 Package 4 x 4 mm
• Allow independent Turn−ON/Turn−OFF Adjustment
• Efficient EliteSiC MOSFET Operation during the Conduction Period
• Fast Turn−off and Robust dV/dt Immunity
• Minimize complexity of bias supply in isolated gate drive applications
• Sufficient VGS amplitude to match EliteSiC best performance
• Self protection of the design
• Small & Low Parasitic Inductance package

 

Applications

• High Perfomance Inverters
• High Power Motor Drivers
• Totem Pole PFC
• Industrial & Motor Drives
• UPS & Solar Inverters
• High Power DC Chargers

ebv content library/npi/2017/onsemi-ncp51705 onsemi NCP51705 EliteSiC MOSFET Driver | EBV Elektronik