Broadcom ACPL-P347 MOSFET and IGBT gate drive optocoupler
ACPL-P347 is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications.
A high-speed 1.0 A gate drive optocoupler device that contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The high rail-to-rail output voltage and high peak output current supported by the device make it ideally suited for directly driving MOSFETs and IGBTs with ratings up to 1200 V / 50 A.
Key features
- High-speed 1.0 A gate drive optocoupler
- Contains an AlGaAs LED
- Ideally suited for driving SiC/GaN MOSFETs and IGBTs
- High rail-to-rail output voltage
Additional features
- 1.0 A Maximum Peak Output Current
- Wide Operating VCC Range: 15 to 30 V
- 110 ns Maximum Propagation Delay
- 50 ns Maximum Propagation Delay Difference
- Rail-to-rail Output Voltage
- 50-kV/μs Minimum Common Mode Rejection (CMR) at VCM = 1500 V
- LED Current Input with Hysteresis
- ICC = 4.2 mA Maximum Supply Current
- Under Voltage Lock-Out (UVLO) Protection with Hysteresis
- Industrial Temperature Range: -40° C to 105° C
- Safety Approval:
- UL Recognized 3750 VRMS for 1 min.
- CSA
- IEC/EN/DIN EN 60747-5-5 VIORM = 891 VPEAK
- Available Options:
- 060E = IEC/EN/DIN EN 60747-5-5
- 500E = Tape and Reel Packaging Option
- XXXE = Lead Free Option
Applications
- SiC/GaN MOSFET and IGBT Gate Drive
- Motor Drives
- Industrial Inverters
- Switching Power Supplies (SPS)
ebv content library/npi/2017/broadcom-acpl-p347
Broadcom ACPL-P347 MOSFET gate drive optocoupler | EBV Elektronik
