Vishay 650 V SiC Schottky diodes

Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices are designed to increase the efficiency of high-frequency applications by reducing switching losses, regardless of the effects from temperature variances - allowing the devices to operate at higher temperatures.

Key features

• Featuring a merged PIN Schottky (MPS) design
• Available with current ratings from 4 A to 40 A
• Offered in the 2L TO-220AC and TO-247AD 3L packages
• Provide high temperature operation to +175 C

Additional features

• Virtually zero reverse recovery losses, invariant with temperature and working condition
• Purely capacitive switching, no losses inside the diode
• Good current surge
• High ratio between the forward current and diode capacitance
• Low leakage at high temperature
• Low induced losses in the active switch
• Improved EMI

Applications

• PFC and out rectification in flyback PSUs and LLC converters
• Telecom equipment
• Solar inverters

Vishay SiC Diodes

The Vishay SiC portfolio covers the most common current rating from small to large. All devices have breakdown voltages of 650 V and a maximum TJ of 175 °C. The packages available are 2L TO-220AC single-diode or TO-247AD 3L dual common cathode configurations.

Available tools

• Available at Vishay web portal:
  • 3D Model
  • Parametric Search 
  • SPICE Model