Maximize Efficiency and Power Density with Nexperia GaN FETs and Broadcom Gate Drivers
Online, On Demand
Date and Time:
- September 25, 2023 I 15:00 CEST
Overview
The gallium nitride (GaN) power semiconductor is rapidly emerging into the commercial market, delivering huge benefits over conventional silicon-based power semiconductors. GaN can improve overall system efficiency, providing low switching losses and higher current capability, reducing the overall system size and costs. The technical benefits coupled with lower costs have increased the fast adoption of GaN power semiconductors in applications such as industrial power supplies and renewable energy inverters.
One of the most important parts to benefit from GaN FET technology is the gate driver. The gate drive solution directly impacts the switching efficiency of the GaN power semiconductor.
This webinar will cover the Nexperia GaN FET technology and the Broadcom gate drive solution together with target applications. We will show how efficiency and power density can be improved when using products.
Key Takeaways
- Learn about the new 33mohm Nexperia GaN FET in a copper clip package and how it maximizes efficiency and power density, available in bottom and top side cooling.
- Gain insights into the latest isolated gate driver for GaN FET technology and learn how the new gate driver will help you benefit from this technology.
- Learn about the half-bridge evaluation board which combines the Nexperia GaN FETs and Broadcom gate driver.
Speakers:
- Ilian Bonov I GaN International Product Marketing Manager, Nexperia
Ilian Bonov works with the Power GaN team at Nexperia in bringing the Nexperia cutting-edge GaN technology to market. After spending several years as power MOSFET application engineer, where he was helping engineers, from different industries successfully design their power electronics solutions, Bonov knows that GaN is the game-changer in power electronics and more engineers need to hear about it and about the benefits it can bring. He holds a bachelor’s degree in electronics from The University of Manchester.
- Saeed Safari I Field Applications Engineer, Industrial Products, Broadcom Inc.
Saeed Safari has been instrumental in setting many new designs and initiatives that helped to grow the industrial products business in Europe. His power electronics experience includes design of direct SiC AC/AC converters for power distribution networks and DC/DC and AC/DC power electronic converters for automotive industries. Safari holds a PhD degree in electrical and electronic engineering from University of Nottingham in the U.K.
- Milan Ivkovic I Director Segment Analog & Power, Technical Support Center Manager, EBV Elektronik
Milan Ivkovic achieved a Dipl-ing. diploma in 2000 and a MSc diploma in 2007 at University of Belgrade School of Electrical Engineering in the area of power factor correction using current injection in 12-pulse converters. He worked on industrial PLCs development and ASIC development, taking responsibilities from design to technical managerial roles.
Register Now
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Nexperia GaN FETs And Broadcom Gate Drivers | EBV Elektronik
