Silicon Carbide CoolSiC™ MOSFETs & diodes

As the leading power supplier with 20 years of experience in Silicon Carbide (SiC) technology development, Infineon provides a portfolio that addresses the need for smarter, more efficient energy generation, transmission and consumption.

The portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems, while meeting the highest quality standards, long system lifetime and providing guaranteed reliability. With CoolSiC™, customers will reach the most stringent efficiency targets while seeing a drop in operational system cost.

The portfolio is comprised of CoolSiC™ Schottky diodes, CoolSiC™ hybrid models, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Infineon's CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes.
The combination of a fast silicon based switch with a CoolSiC™ schottky diode is often termed a “hybrid” solution. In recent years Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like e. g. solar and UPS.

CoolSiC™ MOSFETs are built on a state-of-the art trench concept that sets a benchmark - allowing for both lowest losses in the application and highest reliability in operation.