Silicon Carbide – SiC
Silicon Carbide (SiC) power semiconductors are rapidly emerging into the commercial market. They deliver several benefits over more than 600V Silicon-based power semiconductors. SiC MOSFETs can improve overall system efficiency by more than 10% and the higher switching capability can reduce the overall system size and costs.
Gallium Nitride – GaN
Gallium Nitride (GaN) power devices are gaining popularity over less than 600V Silicon power devices as its faster switching capability can improve overall system efficiency and reduce the size and costs required.
SiC and GaN technical benefits coupled with lower costs have increased the fast adoption of SiC power semiconductors in applications like industrial motor control, induction heating, industrial power supplies, and renewable energy.
Broadcom® gate drive optocouplers are used extensively in driving silicon-based semiconductors like IGBT and power MOSFETs.
Optocouplers are used to provide reinforced galvanic insulation between the control circuits from the high voltages and the power semiconductors. The ability to reject high common mode noise (CMR) will prevent erroneous driving of the power semiconductors during high frequency switching. Broadcom´s next generation of gate drive optocouplers can be used to protect and drive SiC and GaN power devices.
Product highlights:
Gate Drive OptocouplersIdeal for driving GaN & SiC MOSFETs and IGBTs used in power conversion applications
Optical Isolation Amplifiers designed specifically for voltage sensing
Well suited for isolated voltage sensing in electronic power converters
ACPL-C87B/C87A/C870 family
Optically Isolated ±50 mV Sigma-Delta Modulator with CMOS Interface
Designed for high current sensing in electronic power converters
ACPL-736J
10A basic gate drive upgrades
“10A Drive, Faster Speed, Better Noise Immunity”
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ACFL-3161 |
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| Package | SSO6 |
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| Working Voltage, VIORM |
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| CTI, Isolation Grp | >175V, IIIa | >600V, I |
| IOUT Min/Max. | 3A/4A | 6/10A |
| tPLH/tPHL Max. | 200ns | 95ns |
| PDD Max. | 100ns | 35ns |
| tR/tF Typ. | 40ns | 7ns |
| CMR Min. | 35kV/µs | 100kV/µs |
| Temperature | 40 ºC to 105º C | -40 ºC to 125ºC |
Why Broadcom?
With roots tracing back more than 50 years to Hewlett-Packard and Avago Technologies, Broadcom is a leading provider of galvanic isolation products for industrial and automotive markets leveraging its field-proven, time-tested optocoupler technology. Broadcom’s opto-isolation solutions provide unmatched high voltage protection and signal isolation that meet or exceed international safety standards. Broadcom optocouplers, including digital optocouplers, isolation amplifiers and gate drive optocouplers, are used in a broad array of applications ranging from power supply and motor control circuits to data communication and digital logic interfaces.
50 Years of Proven High Voltage Protection and Signal Isolation
Are you prepared?
- Proven Galvanic Isolation
- Unmatched High Voltage Protection
- Superior Noise/Transient Suppression
With roots tracing back more than 50 years to Hewlett-Packard and Avago Technologies, Broadcom is a leading provider of galvanic isolation products for industrial and automotive markets leveraging its field-proven, time-tested optocoupler technology.
Watch the whole length interview!
- Nexperia GAN039-650NBB Half Bridge Evaluation Board
- GaN Reference Design – Panasonic & GaN Systems
- GaN Reference Design - Test & Performance
- SiC/GaN MOSFET Ready
Nexperia GAN039-650NBB Half Bridge Evaluation Board
Nexperia 650V 33mOhm GaN FET – ACFJ-3262
This is a half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262.
The evaluation board uses a dual-channel ACFJ-3262 to drive both top and bottom bridge GaN FETs directly. Each channel of the ACFJ-3262 has two outputs to turn-on and off the GaN efficiently and reliably. The ACFJ-3262 has an UVLO of less than 10V, which is suitable for the 12V VGS operation of the GaN FET. It has more than 100kV/µs of noise immunity for fast switching dv/dt.
The GAN039-650NBB is a 650 V, 33 mΩ GaN FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability and performance.
For evaluation board support, please drop us an email at Optocoupler-Enquiry.pdl@broadcom.com
Features
- ACFJ-3262, 10A dual-channel isolated gate drive optocoupler
- GAN039-650NBB, 650 V, 33 mΩ GaN FET
- Double pulse test for high slew rate dv/dt and Eon/Eoff performance
Applications
- Renewable energy inverters
- Industrial power supplies
GaN Reference Design – Panasonic & GaN Systems
ACPL-P346: GaN Systems GaN E-HEMT GS66508T Half Bridge Evaluation
Read Board Reference Manual: Reference Manual_ACPL-P346-RefDesign-RM101
Half Bridge Board
Panasonic 600V 70mΩ X-GaN transistor, PGA26E07BA Broadcom 2.5A gate drive optocoupler, ACPL-P346
Half Bridge Board
GaN Systems 650V E-HEMT GS66508T (30A/50mΩ)
Broadcom 2.5A gate drive optocoupler, ACPL-P346
GaN Reference Design - Test & Performance
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| Slew Rate dv/dt Test |
116kV/us
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| Switching Power Loss Test |
Turn-Off <15μJ Turn-On ~ 40μj
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Turn-Off <15μJ Turn-On ~ 40μj
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| Efficiency Test |
Boost DC/DC, 200V/380V, 100kHz, 25° C 98.7%
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Buck DC/DC, 400V/200V, 100kHz, 25° C 98.5%
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SiC/GaN MOSFET Ready
ACPL-P346: Panasonic X-GaN Transistor PGA26E07BA Half Bridge Evaluation Board
Panasonic, Gate Drive for X-GaN
PGA26E19BA – 600V/10A GaN Transistor
Read Reference Manual: Reference Manual_ACPL-P346-X-GaN-RM100 M100
- ACPL-P349/C87A/C79A
- ACPL-W346
ACPL-P349/C87A/C79A
Wolfspeed(CREE) SiC MOSFET C2M0025120D and Diode C4D40120D
The three-phase 15 kW SiC Inverter designed by NSOLUTION is meant to demonstrate the high performance of Wolfspeed (CREE) 1200V/90A SiC MOSFET (C2M0025120D) and SiC Schottky diodes (C4D40120D). The inverter also includes gate optocouplers ACPL-P349 for driving the SiC MOSFET, ACPL-C87A for DC voltage detection, and ACPL-C79A for three-phase AC-current measurements.
Read Reference Manual: Reference Design ACPL-P349-cxxa-RM100
ACPL-W346
Wolfspeed(CREE) SiC MOSFET C2M0080120D
This evaluation kit, KIT8020CRD8FF1217P-1 is meant to demonstrate the high performance of Wolfspeed (CREE) 1200V SiC MOSFET (C2M0080120D) and SiC Schottky diodes (C4D20120D) in the standard TO-247 package.
Read Maunal: Evaluation Kit ACPL-W346
Power Your Inverters Design!
690VAC Motor Drive and 1500VDC Solar Inverter
IEC 61800-5-1 (motor drives) and IEC 62109-1 (solar inverters), creepage requirement is ≥ 13.8mm and 15mm respectively. GO with OPTO!
SiC/GaN for Solar Inverter and UPS
Due to higher switching frequencies, SiC and GaN switches have tighter requirements on CMTI performances. GO with OPTO!
Servo Motor Drive for Industrial Robot
Precision and accuracy have to be maintained, even in harsh industrial environment. EMI performance is critical. GO with OPTO!
ResourcesEvaluation Kits and Reference Designs:
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