Nexperia GAN039-650NBB Half Bridge Evaluation Board
Nexperia 650V 33mOhm GaN FET – ACFJ-3262
This is a half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262.
The evaluation board uses a dual-channel ACFJ-3262 to drive both top and bottom bridge GaN FETs directly. Each channel of the ACFJ-3262 has two outputs to turn-on and off the GaN efficiently and reliably. The ACFJ-3262 has an UVLO of less than 10V, which is suitable for the 12V VGS operation of the GaN FET. It has more than 100kV/µs of noise immunity for fast switching dv/dt.
The GAN039-650NBB is a 650 V, 33 mΩ GaN FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability and performance.
For evaluation board support, please drop us an email at Optocoupler-Enquiry.pdl@broadcom.com
Features
- ACFJ-3262, 10A dual-channel isolated gate drive optocoupler
- GAN039-650NBB, 650 V, 33 mΩ GaN FET
- Double pulse test for high slew rate dv/dt and Eon/Eoff performance
Applications
- Renewable energy inverters
- Industrial power supplies
GaN Reference Design – Panasonic & GaN Systems
ACPL-P346: GaN Systems GaN E-HEMT GS66508T Half Bridge Evaluation
Read Board Reference Manual: Reference Manual_ACPL-P346-RefDesign-RM101
Half Bridge Board
Panasonic 600V 70mΩ X-GaN transistor, PGA26E07BA Broadcom 2.5A gate drive optocoupler, ACPL-P346
Half Bridge Board
GaN Systems 650V E-HEMT GS66508T (30A/50mΩ)
Broadcom 2.5A gate drive optocoupler, ACPL-P346
SiC/GaN MOSFET Ready
ACPL-P346: Panasonic X-GaN Transistor PGA26E07BA Half Bridge Evaluation Board
Panasonic, Gate Drive for X-GaN
PGA26E19BA – 600V/10A GaN Transistor
Read Reference Manual: Reference Manual_ACPL-P346-X-GaN-RM100 M100
