Session Timeout

Your session is about to expire. Do you want to extend the session?

00:

Extend My Session

Custom Meta Tags

EBV - Infineon - Si-SiC-GaN (HB)

Infineon Si-SiC-GaN

EBV - Infineon - Si-SiC-GaN - Intro Static HTML

Unlock the full potential with Infineon Si, SiC & GaN

The power of ideal topology and switch combination

The right power topology and switch combination of Si and WBG semiconductors is pivotal in unlocking the full potential of power electronic systems. By strategically aligning the topology and switch technology with the application requirements, engineers can achieve remarkable improvements in performance, efficiency, power density and system costs.

Infineon, as a leading power semiconductor manufacturer, offers state-of-the-art innovations in chip and package designs. With the industry’s broadest product and package portfolio, Infineon is serving any application from low to high voltage and provides the full offering for power systems with Si, SiC and GaN solutions, ensuring best price-performance in your design.

Powering the future with Si, SiC, and GaN

Presenter: Dr. Gerald Deboy, Fellow at Infineon Technologies

Explore the latest breakthroughs in Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN) power semiconductors. Discover the value propositions of each technology, and learn from the Infineon expert, Dr. Gerald Deboy, how to harness their full potential in a wide range of applications.

Infineon Power Topology Selection Guide

EBV - Infineon - Si-SiC-GaN - Categories Static HTML

Our silicon MOSFETs such as CoolMOS™, OptiMOS™ and StrongIRFET™ power MOSFETs are the mainstream technology

suitable for low to high power,
targeting voltages ranging from 15 V to 950 V, with up to 6.5 kV including IGBTs

Discover products

Our Silicon Carbide MOSFETs , such as the CoolSiC™ MOSFET Generation 2 is the technology of choice for

medium to high power designs
with moderate to high switching frequencies
targeting voltages ranging from 400 V to 3.3 kV

Discover products

Our CoolGaN™ Transistors enable new horizons in efficiency, power density, system integration and bidirectionality in,

low to medium power designs
at highest switching frequencies
targeting voltages ranging from 60 V to 700 V

Discover products

EBV - Infineon - Si-SiC-GaN - Products Tabs

Featured products
Si portfolio
SiC portfolio
GaN portfolio

Featured products

Explore a selection of Infineon’s cutting-edge Silicon, Silicon Carbide, and Gallium Nitride solutions designed for superior efficiency and performance in your applications.

Si MOSFETs

Discover Infineon’s broad OptiMOS™, StrongIRFET™, and CoolMOS™ MOSFETs portfolio here.

Part number	Description	Package	R_DS(on) typ [mΩ] 18 V
IQE004NE1LM7SCATMA1	15 V OptiMOS™ 7 power MOSFET	PQFN 3.3x3.3 Source-Down DSC (PG-WHSON-8)	0.45 mΩ
ISC009N03LF2SATMA1	30 V StrongIRFET™ 2 power MOSFET	SuperSO8 5x6 (PG-TDSON-8)	0.9 mΩ
IPF010N06NF2SATMA1	60 V StrongIRFET™ 2 power MOSFET	D²PAK 7-pin package (PG-TO263-7)	1.05 mΩ
IPT017N10NM5LF2ATMA1	100 V OptiMOS™ 5 Linear FET 2 V	TOLL (PG‑HSOF‑8)	1.7 mΩ
IPTC020N13NM6ATMA1	135 V OptiMOS™ 6 power MOSFET	TOLT (PG‑HDSOP‑16)	2 mΩ
ISZ520N20NM6ATMA1	200 V OptiMOS™ 6 power MOSFET	PQFN 3.3x3.3 (PG-TSDSON-8-FL)	52 mΩ
IPDQ60R007CM8XTMA1	600 V CoolMOS™ 8 SJ MOSFET	Q-DPAK (PG-HDSOP-22)	7 mΩ

SiC MOSFETs

Discover Infineon’s broad CoolSiC™ MOSFETs portfolio here.

Part number	Description	Package	R_DS(on) typ [mΩ] 18 V
IMT40R011M2H	CoolSiC™ MOSFET 400 V G2	TOLL (PG‑HSOF‑8)	11 mΩ
IMT65R015M2H	CoolSiC™ MOSFET 650 V G2	TOLL (PG‑HSOF‑8)	15 mΩ
AIMDQ75R016M1H	CoolSiC™ Automotive MOSFET 750 V G1	Q-DPAK (PG-HDSOP-22)	16 mΩ
AIMZH120R010M1T	CoolSiC™ Automotive MOSFET 1200 V G1	TO247-4	8.7 mΩ
IMZC120R026M2H	CoolSiC™ MOSFET 1200 V G2	TO-247 4pin	26 mΩ
IMYH200R024M1H	CoolSiC™ MOSFET 2000 V G1	TO-247PLUS-4-HCC	24 mΩ
FF2MR12W3M1H_B11	CoolSiC™ MOSFET 1200 V power module	Easy 3B half-bridge module	1.44 mΩ

GaN transistors

Discover Infineon’s broad CoolGaN™ transistors portfolio here.

Part number	Description	Package	R_DS(on) typ [mΩ] 18 V
IGOT65R055D2	CoolGaN™ Transistor 650 V G5	DSO-20	55 mΩ
IGOT65R035D2	CoolGaN™ Transistor 650 V G5	DSO-20	35 mΩ
IGOT65R025D2	CoolGaN™ Transistor 650 V G5	DSO-20	25 mΩ
IGT65R140D2	CoolGaN™ Transistor 650 V G5	TOLL (PG‑HSOF‑8)	140 mΩ
IGT65R055D2	CoolGaN™ Transistor 650 V G5	TOLL (PG‑HSOF‑8)	55 mΩ
IGT65R035D2	CoolGaN™ Transistor 650 V G5	TOLL (PG‑HSOF‑8)	35 mΩ
IGT65R025D2	CoolGaN™ Transistor 650 V G5	TOLL (PG‑HSOF‑8)	25 mΩ
IGLT65R055D2	CoolGaN™ Transistor 650 V G5	TOLT (PG‑HDSOP‑16)	55 mΩ
IGLT65R035D2	CoolGaN™ Transistor 650 V G5	TOLT (PG‑HDSOP‑16)	35 mΩ
IGLT65R025D2	CoolGaN™ Transistor 650 V G5	TOLT (PG‑HDSOP‑16)	25 mΩ
IGB110S101	CoolGaN™ Transistor 650 V G3	PQFN 3x3 (PG-VSON-4)	9.4 mΩ
IGC033S101	CoolGaN™ Transistor 650 V G3	PQFN 3x5 (PG-VSON-6)	2.4 mΩ
IGC033S10S1	CoolGaN™ Transistor 650 V G3	PQFN 3x5 (PG-TSON-6)	2.4 mΩ

Gate driver ICs

Discover Infineon’s broad EiceDRIVER™ gate driver ICs portfolio here.

Part number	Description	Package
2EDR6258XXUMA1	EiceDRIVER™ 2EDi, 2-channel reinforced isolated gater driver IC	DSO-14, 300mil
2EDR7259XXUMA1	EiceDRIVER™ 2EDR, 2-channel isolated gate driver IC	DSO-14, 300mil
1EDN8550BXTSA1	EiceDRIVER™ 1EDN, 1-channel non-isolated gate driver IC	SOT23 6-pin
1EDB7275FXUMA1	EiceDRIVER™ 1EDB, 1-channel isolated gate driver IC	DSO-8 150 mil

Evaluation Boards

Image	Part number	Description
	KIT_1EDB_AUX_SiC	Complete driving solution for SiC MOSFETs, including an isolated gate driver IC and its floating auxiliary supply.
	KIT_DRIVER_1EDN7550B	Test platform for Infineon's single-channel non-isolated gate driver IC with truly differential inputs.

Infineon’s low and high-voltage MOSFET family

High performance & flexibility through technology and package innovation

Low to medium voltage power MOSFETs

30 V – 300 V StrongIRFET™ power MOSFETs
The StrongIRFET™ 2 power MOSFETs cater to a wide variety of applications, including adapters, motor drives, e-scooters, battery management systems, and more. They offer broad availability, an excellent price/performance ratio, and robustness, making it easy for designers to select and purchase the appropriate products. Optimized for both low- and high-switching frequencies, these MOSFETs provide design flexibility across various applications.

Image	Product	BUY NOW
	StrongIRFET™ 2 30 V / 40 V / 60 V / 80 V / 100 V 0.9mΩ – 13mΩ Package options: DPAK \| D²PAK \| D²PAK-7 \| PQFN 3.3 x 3.3 \| SuperSO8 5x6 \| TO-220 \| TO-22 FullPAK \| TOLL	BUY NOW
	StrongIRFET™ 20-300 V 0.45mΩ – 5.9 mΩ Package options: DPAK \| D²PAK \| D²PAK-7 \| DirectFET™ L8 \| TO-220 \| TO-262 \| PQFN 5x6 \| TO-247 \| TOLL

Image

Product

BUY NOW

StrongIRFET™ 2
30 V / 40 V / 60 V / 80 V / 100 V
0.9mΩ – 13mΩ

BUY NOW

StrongIRFET™
20-300 V
0.45mΩ – 5.9 mΩ

15 V – 300 V OptiMOS™ family
The OptiMOS™ family is designed to meet the highest quality, and performance demands in power system designs, ranging from 15 V to 300 V. They feature ultralow RDS(on) and low charge for high switching frequency applications, enabling innovation and performance in various applications such as switch mode power supplies (SMPS), battery-powered applications, motor control and drives, inverters, and computing.

OptiMOS™ devices are available in a broad range of SMD and THT packages to address application specific requirements.

Image	Product	BUY NOW
	OptiMOS™ 7 15 V / 40 V 0.57mΩ - 2.15mΩ Package options: PQFN 2x2 \| PQFN 3.3x3.3 Source-Down \| PQFN 3.3x3.3 Source-Down with dual-side cooling \| PQFN 3.3x3.3 Source-Down Center-Gate \| PQFN 5x6	BUY NOW
	OptiMOS™ 6 40 V / 100 V / 120 V / 135 V / 150 V / 200 V 0.36mΩ - 52mΩ Package options: D²PAK-3 \| D²PAK-7 \| PQFN 6.3x6.0 \| PQFN 3.3x3.3 \| PQFN 3.3x3.3 Source-Down center-gate \| PQFN 3.3x3.3 Source-Down \| PQFN 3.3x3.3 Source-Down dual-side cooling \| PQFN 5x6 Source-Down \| PQFN 5x6 Source-Down dual-side cooling \| PQFN 8x6 \| PQFN 2x2 \| sTOLL \| SuperSO8 \| TO-220 \| TOLL \| TOLG \| TOLT	BUY NOW
	OptiMOS™ 5 25 V / 30 V / 40 V / 60 V / 80 V / 100 V / 150 V 0.29mΩ - 42mΩ Package options: D2PAK, D2PAK-7, DPAK, DirectFET, I2PAK, PQFN 2x2, PQFN 3.3x3.3 \| PQFN 3.3 x 3.3 Fused Lead \| PQFN 3.3x3.3 Source-Down \| PQFN 3.3x3.3 Source-Down dual-side cooling \| PQFN 3.3x3.3 Source-Down center-gate \| PQFN 5x6 Source-Down \| PQFN 5x6 Source-Down center-gate \| PQFN 5x6 Source-Down dual-side cooling \| Power Block 5x6 \| SuperSO8 5x6 \| SuperSO8 5x6 DSC \| TO-220 \| TO-220 FullPAK \| TOLG \| TOLL \| TOLT \| sTOLL	BUY NOW
	OptiMOS™ 3 25-300 V 1.1mΩ - 425mΩ Package options: D2PAK \| D2PAK 7pin \| DPAK \| DirectFET \| I2PAK \| PQFN 3.3 x 3.3 \| SO-8 \| SuperSO8 5x6 \| TO-220 \| TO-220 FullPAK	BUY NOW

High voltage superjunction MOSFETs

500 V – 950 V CoolMOS™ SJ MOSFET
Explore our innovative CoolMOS™ N-channel MOSFET portfolio ranging from 600V to 950V, designed for a diverse range of applications. This product line targets a wide spectrum of power levels, offering a well-balanced technology that combines ease of use with excellent performance and competitive pricing.
Additionally, our automotive-qualified superjunction (SJ) MOSFETs deliver unparalleled reliability well above automotive lifetime requirements.

CoolMOS™ 500 V – 950 V Superjunction MOSFET families

	Product	Applications	BUY NOW
Best price performance	600 V CoolMOS™ 8 7 mΩ - 600 mΩ Package options: Q-DPAK TSC \| D-DPAK \| TOLL \| Thin-TOLL 8x8 \| DPAK \| TO-247 \| TO-247 4pin \| TO-220 \| TO-220 FullPAK narrow lead	Server Telecom SMPS Solar EV charging SSCB UPS Consumer	BUY NOW
Price performance	500 V CoolMOS™ CE 190 mΩ - 2 kΩ Package options: TO-220 \| TO-220 FullPAK \| DPAK \| SOT-223	LCD TV Adapter Lighting PC power Consumer LED	BUY NOW
	600 V CoolMOS™ P7 24 mΩ – 600 mΩ Package options: TO-220 \| TO-220 FullPAK \| TO-220 FullPAK narrow lead \| TO-247 \| TO-247 4-pin \| DPAK \| ThinPAK 8x8 \| D²PAK \| SOT-223	Smartphone charger Adapter Lighting TV PC power Solar LSEV Server Telecom EV charging	BUY NOW
	700 V CoolMOS™ P7 360 mΩ - 2 kΩ Package options: IPAK short lead \| TO-2FullPAK \| DPAK \| TO-220 FullPAK narrow lead \| SOT-22320	Smartphone charger Adapter TV Lighting Audio AUX power	BUY NOW
	800 V CoolMOS™ P7 280 mΩ - 4.5 kΩ Package options: TO-220 \| TO-220 FullPAK \| DPAK \| IPAK \| SOT-223 \| TO-220 FullPAK narrow lead \| ThinPAK 5x6	Adapter Lighting Audio Industrial SMPS AUX power	BUY NOW
	950 V CoolMOS™ P7 450 mΩ - 3.7 kΩ Package options: TO-220 FullPAK \| SOT-223 \| TO-251 long leads \| DPAK	Lighting Smart metering Smartphone charger Adapter AUX power Industrial SMPS	BUY NOW
Fast-recovery diode	600 V CoolMOS™ PFD7 125 mΩ – 2 kΩ Package options: TO-220 FullPAK narrow leads \| DPAK \| SOT-223 \| ThinPAK 5x6	Consumer Smartphone charger Adapter Pumps Fans Fridge	BUY NOW
	950 V CoolMOS™ PFD7 60 mΩ - 450 mΩ Package options: TO-220 FullPAK \| TO-247 \| DPAK \| D²PAK	Lighting Smart metering Smartphone charger Adapter AUX power Industrial SMPS	BUY NOW
	600 V CoolMOS™ CFD7 15 mΩ – 280 mΩ Package options: TO-220 \| D²PAK \| TO-220 FullPAK \| TO-247 \| DPAK \| ThinPAK 5x6 \| D-DPAK \| TOLL \| Q-DPAK	TV Relay Solar SMPS Server Telecom EV charging	BUY NOW
	650 V CoolMOS™ CFD7 17 mΩ - 200 mΩ Package options: TO-220 \| D²PAK \| TO-247 \| TO-247 4-pin \| ThinPAK 8x8 \| Q-DPAK TSC \| Q-DPAK BSC	Server Telecom EV charging Solar	BUY NOW
Highest performance	600 V CoolMOS™ C7 Gold (G-series) 28 mΩ – 190 mΩ Package options: TOLL \| D-DPAK	Telecom Server Solar Industrial SMPS	BUY NOW
	600 V CoolMOS™ C7 17 mΩ – 185 mΩ Package options: TO-220 \| D²PAK \| TO-220 FullPAK \| TO-247 \| TO-247 4-pin \| DPAK \| ThinPAK 8x8	Solar PC power Server Telecom SMPS	BUY NOW
	650 V CoolMOS™ C7 19 mΩ - 230 mΩ Package options: TO-220 \| D²PAK \| TO-220 FullPAK \| TO-247 \| TO-247 4-pin \| DPAK \| ThinPAK 8x8	Solar PC power Server Telecom Industrial SMPS	BUY NOW
Slow switching	600 V CoolMOS™ S7/S7T 10 mΩ – 65 mΩ Package options: TO-220 \| TOLL \| TOLL incl. Tempereatue sensor \| Q-DPAK incl. Temperature sensor \| Q-DPAK TSC \| Q-DPAK BSC	SMPS Solar UPS LSEV PLC	BUY NOW

CoolMOS™ 600V – 800V Automotive Superjunction MOSFET families

	Product	Applications	BUY NOW
Price performance	800 V CoolMOS™ C3A 290 mΩ -2.7 kΩ Package options: TO-247 \| DPAK \| D²PAK	eMobility On-board charger DC-DC	BUY NOW
Highest cosmic-radiation robustness	650 V CoolMOS™ CFD7A 17 mΩ - 230 mΩ Package options: TO-220 \| TO-247 \| TO-247 short-leads \| D²PAK 3pin \| D²PAK 7pin \| Q-DPAK BSC \| Q-DPAK TSC	eMobility On-board charger DC-DC	BUY NOW
Slow switching	600 V CoolMOS™ S7A/S7TA 10 mΩ - 40 mΩ Package options: Q-DPAK BSC \| Q-DPAK TSC	On-board charger eMobility Battery disconnect eFuses and SSR	BUY NOW

Image

Product

Applications

BUY NOW

Price performance

800 V CoolMOS™ C3A
290 mΩ -2.7 kΩ

Package options:
TO-247 | DPAK | D²PAK

eMobility
On-board charger
DC-DC

BUY NOW

Highest cosmic-radiation robustness

650 V CoolMOS™ CFD7A
17 mΩ - 230 mΩ

eMobility
On-board charger
DC-DC

BUY NOW

Slow switching

600 V CoolMOS™ S7A/S7TA
10 mΩ - 40 mΩ

Package options:
Q-DPAK BSC | Q-DPAK TSC

On-board charger
eMobility
Battery disconnect
eFuses and SSR

BUY NOW

CoolSiC™ MOSFETs Generation 2

Empowering the next generation of high-performance systems

Explore how the new CoolSiC™ trench MOSFET G2 enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

Features

400 V, 650 V, 750 V and 1200 V CoolSiC™ MOSFET G2
Lowest available R_DS(on)
Largest product portfolio
Unique robustness features

Potential applications

EV charging
On-board charger (OBC)
DC-DC converter high-voltage
Solar
UPS
Drives
Class-D audio
Datacenter and telecom power, AI server PSU, industrial SMPS
Renewables
Solid-state circuit breaker
Consumer applications (White Goods, TV, Air conditioning, Heat pumps)

Featured products

CoolSiC™ MOSFETs 400 V G2
R_DS(on) max [mΩ] 18 V	R_DS(on) typ [mΩ] 18 V	TOLL	D2PAK-7
14.4	11.3	IMT40R011M2H	IMBG40R011M2H
15.0	19.1	IMT40R015M2H	IMBG40R015M2H
25.4	32.1	IMT40R025M2H	IMBG40R025M2H
36.4	45,7	IMT40R036M2H	IMBG40R036M2H
44.9	56.2	IMT40R045M2H	IMBG40R045M2H

CoolSiC™ MOSFETs 650 V G2
R_DS(on) max [mΩ] 18 V	R_DS(on) typ [mΩ] 18 V	TO-247-3	TO-247-4	D2PAK-7	Q-DPAK TSC	TOLL	TOLT	Thin-TOLL
62	50	IMW65R050M2H	IMZA65R050M2H	IMBG65R050M2H		IMT65R050M2H	IMLT65R050M2H	IMTA65R050M2H
49	40	IMW65R040M2H	IMZA65R040M2H	IMBG65R040M2H		IMT65R040M2H	IMLT65R040M2H	IMTA65R040M2H
24	20	IMW65R020M2H	IMZA65R020M2H	IMBG65R020M2H	IMDQ65R020M2H	IMT65R020M2H	IMLT65R020M2H	IMTA65R020M2H
18/21	14.5 / 16	IMW65R015M2H	IMZA65R015M2H	IMBG65R015M2H	IMDQ65R015M2H	IMT65R015M2H	IMLT65R015M2H
8.5	6.7 / 7			IMBG65R007M2H	IMDQ65R007M2H

CoolSiC™ MOSFETs 750 V G2
R_DS(on) max [mΩ] 18 V	R_DS(on) typ [mΩ] 18 V	Q-DPAK TSC
78	60	AIMDQ75R060M2H
31	25	AIMDQ75R025M2H
20	16	AIMDQ75R016M2H (available soon)

CoolSiC™ MOSFET 1200 V G2
R_DS(on) [mΩ]	D2PAK-7 (TO-263-7) Generation 2
8	IMBG120R008M2H
12	IMBG120R012M2H
17	IMBG120R017M2H
22	IMBG120R022M2H
26	IMBG120R026M2H
34	IMBG120R034M2H
40	IMBG120R040M2H
53	IMBG120R053M2H
78	IMBG120R078M2H
116	IMBG120R116M2H
181	IMBG120R181M2H
234	IMBG120R234M2H

GaN transistors

Discrete solutions for highest efficiency & power density

Infineon’s GaN devices are highly efficient for power conversion in the voltage range of up to 700 V. The CoolGaN™ Transistors feature fast turn-on and turn-off speeds, minimal switching losses, and a wide variety of package options. Qualified to rigorous criteria, CoolGaN™ exceeds industry standards and significantly enhances overall system performance while minimizing system costs and increasing ease of use.

Features

60 V / 80 V / 100 V / 120 V / 650 V / 700 V CoolGaN™ Transistors
Broad package selection
R_DS(on) range: 1.4 mΩ – 270 mΩ

Potential applications

Renewables and energy storage systems
Robots
Drones
AI data center
Telecom
Industrial SMPS
Consumer applications (TV SMPS, home appliances, etc.)
USB-C adapters & chargers

Medium-voltage GaN devices

Image	Product	Buy Now
	CoolGaN™ Transistor 60 V – 120 V G3 1.4 mΩ - 16 mΩ Package options: PQFN 3x3 top-side cooled, PQFN3x3 bottom-side cooled, PQFN 3x5 top-side cooled, PQFN 3x5 bottom-side cooled	BUY NOW

Image

Product

Buy Now

CoolGaN™ Transistor 60 V – 120 V G3
1.4 mΩ - 16 mΩ

Package options:
PQFN 3x3 top-side cooled, PQFN3x3 bottom-side cooled, PQFN 3x5 top-side cooled, PQFN 3x5 bottom-side cooled

BUY NOW

High-voltage GaN devices

Image	Product	BUY NOW
	CoolGaN™ Transistor 650 V / 700 V G5 25 mΩ - 270 mΩ Package options: TOLL, TOLT, ThinPAK 5x6, DSO, DFN	BUY NOW

Image

Product

BUY NOW

CoolGaN™ Transistor 650 V / 700 V G5
25 mΩ - 270 mΩ

Package options:
TOLL, TOLT, ThinPAK 5x6, DSO, DFN

BUY NOW

Why Infineon GaN?

Infineon Logo

Choosing The Right Power Switch Technology For Your Application | EBV Elektronik

EBV & Infineon | Choosing the Right Power Switch Technology for your Application

Online, On Demand

Join us to explore the future of power devices in industrial apps! Learn how GaN, Si & SiC impact SMPS design, boost motor drive performance & simplify your device selection. Sign up today!

EBV - Infineon - Si-SiC-GaN - Power and Sensing Guide (GBL)

Power and Sensing Selection Guide

Infineon’s power and sensor solution, application and product highlights in one catalog.

Download now

EBV - Infineon - Si-SiC-GaN - Gate Driver ICs Guide (GBL)

Gate Driver ICs Selection Guide

Infineon offers a comprehensive portfolio of EiceDRIVER™ gate driver ICs with a variety of configurations, voltage classes, isolation levels, protection features, and package options.

Download now