CoolGaN™ – new paradigm for high power SMPS

• Best FOM of 600-V-power devices
• Excellent for hard- and soft-switching topologies, and for high-frequency and high-power-density applications
• Optimized for turn-on and turn-off
• Zero reverse-recovery charge
• The cutting-edge technology for innovative solutions and high volumes
• Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22) (excl. IGT60R190D1S)

  Compared to Si technology:

• 10x higher breakdown field and 2x higher mobility
• 10x lower output charge
• 10x lower gate charge and linear C_oss characteristic
   

• Highest efficiency for SMPS; excellent efficiency in resonant circuits
• Highest power density enables small and light weight designs
• SMD packaging ensures that switching capabilities of GaN are fully accessed
• Easy to use thanks to a compelling GaN EiceDRIVER™ gate driver IC portfolio for outstanding robustness and efficiency
• Very low R_DS(on) and large cost-down potential
• New topologies and current modulation
• Ultrafast (nearly lossless) switching
• Reduced EMI
• High-quality volume supply that enables faster time-to-market
• Reduced BOM and overall system cost

• Output impedance:
• R_DS(on) source - 0.85 Ω
• R_DS(on) sink - 0.35 Ω
• Input-output propagation delay accuracy: -6 ns / +7 ns
• CMTI: > 150 V/ns
• Galvanic isolation​
• Package:
• ​1EDF5673K: 13-pin LGA 5x5 mm
• 1EDF5673F: 16-pin DSO 150 mil
• 1EDS5663H: 16-pin DSO 300 mil
• Placement:
• Totem-pole PFC
• Resonant LLC
• Pace: 18 ns minimum output pulse-width
• Precision: 13 ns propagation delay window
• Negative gate-drive voltage for the 1^st pulse

• Complete support of all requirements specific to enhancement GaN HEMTs’ operation
• Switching behavior independent from the duty cycle
• Negative gate-driver voltage -> protection against spurious turn-on
• Two off-voltage levels -> least dead-time losses
• Excellent timing accuracy -> best system efficiency
• Constant switching transients -> least R&D effort
• Best robustness
• Integrated galvanic isolation for
• high power density of the application design
• excellent system-level timing accuracy
• robust common-mode transient immunity (CMTI)
• Reduced driver complexity and no need for customized drivers

Package

Isolation class

Rating

Surge testing

Certification

Propagation delay accuracy

Typ. high level (sourcing) output resistance

Typ. low level (sinking) output resistance

1EDF5673K

13-pin LGA 5x5 mm

functional

V_IO = 1.5kV_DC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

1EDF5673F

13-pin LGA 5x5 mm

functional

V_IO = 1.5kV_DC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

1EDS5663H

13-pin LGA 5x5 mm

functional

V_IO = 1.5kV_DC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

Application note!

Study design guide

Interactive 3D model

EVAL_2500W_PFC_GAN_A

2500 W full-bridge totem-pole power factor correction (PFC) evaluation board

Infineon board components:

• CoolGaN™ 600 V e-mode HEMTs (IGO60R070D1)

• 650 V CoolMOS™ C7 Gold SJ MOSFET (IPT65R033G7)

  https://export.farnell.com/c/semiconductors-ics/power-management-ics-pmic/gate-drivers?st=1edi60n12afxuma1&showResults=true

• EiceDRIVER™ 1EDI Compact (1EDI20N12AF and 1EDI60N12AF)

• EiceDRIVER™ 2EDN (2EDN7523G or 2EDN7524F)

• Quasi-resonant CoolSET™ (ICE2QR2280G)

• CCM PFC controller (ICE3PCS01G)

This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers.

The input voltage range of the board is between 90 to 265 V_AC, while the output voltage is 390 V_DC. All power components are surface mount devices (SMD) enabling faster and cheaper assembly process.

Target applications: SMPS, server PSU and telecom rectifiers

Features:

• Flat efficiency >99% over a wide load range

Benefits:

• Suitable reference design for high-efficiency, high-power density server PSU and telecom rectifiers

• Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies

Application note!

Interactive 3D model

EVAL_1EDF_G1_HB_GAN

CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

Infineon board components:

• CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
• GaN EiceDRIVER™ (1EDF5673K)

The board features a half-bridge of 70 mΩ GaN power transistors, and a pair of EiceDRIVER™ GaN gate drivers along with input logic that provides adjustable dead-time. Using an external inductor, the board can be configured for buck- or boost-mode, double-pulse testing or continuous PWM operation, hard- or soft-switching. Operating frequency can be up to several MHz. Power electronic engineers and designers may investigate similarities and differences of GaN power transistors compared to their silicon counterparts.

Target application: evaluation of GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications

Features:

• Simple GaN half-bridge with dedicated GaN driver ICs
• Capable of multi-MHz switching frequencies
• Zero reverse-recovery – can shift between hard or soft-switching
• GaN transistors feature top-side cooling for high power dissipation
• Qualification: industrial

Benefits:

• Easy setup and use
• Multiple configurations possible
• Evaluate high-frequency capabilities of GaN
• Evaluate waveforms with low ringing, overshoot and EMI
• Enables easy evaluation at multi-kilowatt power levels