High-efficiency GaN switched-mode power supply (SMPS)
![Image of 1EDi-G1 GaN Driver IC DIAGRAM Image of 1EDi-G1 GaN Driver IC DIAGRAM](/wcm/connect/3ab3fbaf-04b9-4346-b31c-dce8ca02fc37/1EDi-G1+GaN+Driver+IC_DIAGRAM_upd09-2018_NEW2_high.jpg?MOD=AJPERES&CACHEID=ROOTWORKSPACE-3ab3fbaf-04b9-4346-b31c-dce8ca02fc37-mWyrq-n)
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Full-bridge totem-pole PFC
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High-voltage CoolGaN™ |
CoolGaN™ 600 V
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High-voltage SJ MOSFETs |
CoolMOS™ C7/G7
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Controller / Driver
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PFC controller |
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LLC controller
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Single-channel isolated gate driver
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Dual-channel isolated gate driver
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Resonant LLC
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High-voltage CoolGaN™
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CoolGaN™ 600 V
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Synchronous rectification
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Low -voltage MOSFETs
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OptiMOS™ 5
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GaN’s switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in3 for 3.6 kW LLC with >98% efficiency).
The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high-frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.
Watch video: hyper-scale computing enabled by Infineon
The CoolGaN™ concept has been designed for industrial applications (15+ years) and supports AC-DC, DC-DC and DC-AC conversion
Key features
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Key benefits
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- Best FOM of 600-V-power devices
- Excellent for hard- and soft-switching topologies, and for high-frequency and high-power-density applications
- Optimized for turn-on and turn-off
- Zero reverse-recovery charge
- The cutting-edge technology for innovative solutions and high volumes
- Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22) (excl. IGT60R190D1S)
Compared to Si technology:
- 10x higher breakdown field and 2x higher mobility
- 10x lower output charge
- 10x lower gate charge and linear Coss characteristic
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- Highest efficiency for SMPS; excellent efficiency in resonant circuits
- Highest power density enables small and light weight designs
- SMD packaging ensures that switching capabilities of GaN are fully accessed
- Easy to use thanks to a compelling GaN EiceDRIVER™ gate driver IC portfolio for outstanding robustness and efficiency
- Very low RDS(on) and large cost-down potential
- New topologies and current modulation
- Ultrafast (nearly lossless) switching
- Reduced EMI
- High-quality volume supply that enables faster time-to-market
- Reduced BOM and overall system cost
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CoolGaN™ 600 V e-mode HEMTs product portfolio
RDS(on) max.
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DSO-20-85
Bottom-side cooling
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DSO-20-87
Top-side cooling
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HSOF-8-3
(TO-leadless)
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LSON-8-1
(DFN 8x8)
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35 mΩ
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70 mΩ
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IGO60R070D1** |
IGOT60R070D1** |
IGT60R070D1** |
IGLD60R070D1** |
190 mΩ
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IGT60R190D1S* |
IGLD60R190D1** |
* Standard grade, ** Industrial grade
Highlight: the newly launched IGLD60R190D1, a CoolGaN™ 600 V e-mode power transistor, comes in the smallest (8x8 mm) package within Infineon's GaN portfolio and is suitable for a broad power range. Being a match for multiple consumer and industrial applications, the optimized cost significantly lowers the technology entry barrier.
Driving enhancement mode GaN HEMTs, such as CoolGaN™, with non-isolated gate (diode input characteristic) and low threshold voltage, is different from driving Superjunction MOSFETs. Infineon’s dedicated GaN EiceDRIVER™ family of single-channel galvanically-isolated gate driver ICs with high gate current for fast turn-on and robust gate-drive topology optimizes the performance of CoolGaN™ devices. Additionally, driver complexity was significantly reduced (medium effort for design-in) and ease-of-use of the accompanied e-mode GaN HEMTs is ensured.
Key features
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Key benefits
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- Output impedance:
- RDS(on) source - 0.85 Ω
- RDS(on) sink - 0.35 Ω
- Input-output propagation delay accuracy: -6 ns / +7 ns
- CMTI: > 150 V/ns
- Galvanic isolation
- Package:
- 1EDF5673K: 13-pin LGA 5x5 mm
- 1EDF5673F: 16-pin DSO 150 mil
- 1EDS5663H: 16-pin DSO 300 mil
- Placement:
- Totem-pole PFC
- Resonant LLC
- Pace: 18 ns minimum output pulse-width
- Precision: 13 ns propagation delay window
- Negative gate-drive voltage for the 1st pulse
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- Complete support of all requirements specific to enhancement GaN HEMTs’ operation
- Switching behavior independent from the duty cycle
- Negative gate-driver voltage -> protection against spurious turn-on
- Two off-voltage levels -> least dead-time losses
- Excellent timing accuracy -> best system efficiency
- Constant switching transients -> least R&D effort
- Best robustness
- Integrated galvanic isolation for
- high power density of the application design
- excellent system-level timing accuracy
- robust common-mode transient immunity (CMTI)
- Reduced driver complexity and no need for customized drivers
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High-voltage GaN driving
![Image of High voltage GaN driving Image of High voltage GaN driving](/wcm/connect/a9e678ec-8d6e-408d-9262-0873c623965a/High+voltage+GaN+driving.jpg?MOD=AJPERES&CACHEID=ROOTWORKSPACE-a9e678ec-8d6e-408d-9262-0873c623965a-mWD4lRV)
GaN EiceDRIVER™ gate driver IC product portfolio
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Input to output isolation
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Package
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Isolation class
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Rating
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Surge testing
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Certification
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Propagation delay accuracy
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Typ. high level (sourcing) output resistance
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Typ. low level (sinking) output resistance
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1EDF5673K
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13-pin LGA 5x5 mm
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functional
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VIO = 1.5kVDC
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n.a.
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n.a.
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-6 ns /+7 ns
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0.85 Ohm
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0.35 Ohm
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1EDF5673F
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13-pin LGA 5x5 mm
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functional
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VIO = 1.5kVDC
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n.a.
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n.a.
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-6 ns /+7 ns
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0.85 Ohm
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0.35 Ohm
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1EDS5663H
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13-pin LGA 5x5 mm
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functional
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VIO = 1.5kVDC
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n.a.
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n.a.
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-6 ns /+7 ns
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0.85 Ohm
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0.35 Ohm
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Simulation model for Infineon’s GaN e-mode HEMTS
Use the simulation model for a performance pre-evaluation of the following e-mode CoolGaN™ 600 V transistors: IGOT60R070D1, IGO60R070D1, IGT60R070D1, IGLD60R070D1, IGT60R190D1S
Trainings for power electronic engineers and designers
Training 1: Online course CoolGaN™ 600 V transistors
Training 2: Online course CoolGaN™ reliability and qualification basics
Training 3: Online course Si, SiC, GaN choose the right technology for different topologies
Training 4: Online course CoolGaN™ power transistors: Why are they used, where and when
Evaluation boards
Image
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Board name & key components
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Description & target applications
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Key features & benefits
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![Image of EVAL_2500W_PFC_GAN_A board Image of EVAL_2500W_PFC_GAN_A board](/wcm/connect/f9b923c5-df87-42bc-baae-cd32ab9846ab/EVAL_2500W_PFC_GAN_A.jpg?MOD=AJPERES&CACHEID=ROOTWORKSPACE-f9b923c5-df87-42bc-baae-cd32ab9846ab-oMlLeXe)
Application note!
Study design guide
Interactive 3D model
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EVAL_2500W_PFC_GAN_A
2500 W full-bridge totem-pole power factor correction (PFC) evaluation board
Infineon board components:
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CoolGaN™ 600 V e-mode HEMTs (IGO60R070D1)
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650 V CoolMOS™ C7 Gold SJ MOSFET (IPT65R033G7)
https://export.farnell.com/c/semiconductors-ics/power-management-ics-pmic/gate-drivers?st=1edi60n12afxuma1&showResults=true
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EiceDRIVER™ 1EDI Compact (1EDI20N12AF and 1EDI60N12AF)
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EiceDRIVER™ 2EDN (2EDN7523G or 2EDN7524F)
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Quasi-resonant CoolSET™ (ICE2QR2280G)
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CCM PFC controller (ICE3PCS01G)
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This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers.
The input voltage range of the board is between 90 to 265 VAC, while the output voltage is 390 VDC. All power components are surface mount devices (SMD) enabling faster and cheaper assembly process.
Target applications: SMPS, server PSU and telecom rectifiers
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Features:
- Flat efficiency >99% over a wide load range
Benefits:
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![Image of EVAL_HB_BC_1EDN8550 board Image of EVAL_HB_BC_1EDN8550 board](/wcm/connect/471a47a6-a8d9-4136-ae07-b7d8907d23c7/EVAL_HB_BC_1EDN8550B.jpg?MOD=AJPERES&CACHEID=ROOTWORKSPACE-471a47a6-a8d9-4136-ae07-b7d8907d23c7-mWDypce)
Application note!
Interactive 3D model
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EVAL_1EDF_G1_HB_GAN
CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
Infineon board components:
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The board features a half-bridge of 70 mΩ GaN power transistors, and a pair of EiceDRIVER™ GaN gate drivers along with input logic that provides adjustable dead-time. Using an external inductor, the board can be configured for buck- or boost-mode, double-pulse testing or continuous PWM operation, hard- or soft-switching. Operating frequency can be up to several MHz. Power electronic engineers and designers may investigate similarities and differences of GaN power transistors compared to their silicon counterparts.
Target application: evaluation of GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications
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Features:
- Simple GaN half-bridge with dedicated GaN driver ICs
- Capable of multi-MHz switching frequencies
- Zero reverse-recovery – can shift between hard or soft-switching
- GaN transistors feature top-side cooling for high power dissipation
- Qualification: industrial
Benefits:
- Easy setup and use
- Multiple configurations possible
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot and EMI
- Enables easy evaluation at multi-kilowatt power levels
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