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Infineon's CoolGaN™ family

EBV - Infineon GAN Long Copy (LC)

CoolGaN™ – new paradigm for high power SMPS

Infineon, leader in power, builds on gallium nitride for ultimate efficiency and reliability

Enter a new era of efficiency with Infineon

Emerging from the newly developed gallium nitride-on-silicon process (GaN-on-Si), Infineon's CoolGaN™ family of HEMT devices significantly increases efficiencies in power conversion, improves power density and reduces the overall financial and environmental impact of power management compared to currently available solutions. Operation at higher switching frequencies with CoolGaN™ - while keeping losses to a very low, manageable level - represents a beneficial advantage. GaN's zero reverse-recovery charge enables topologies (i.e., full-bridge totem-pole PFC) so far not considered for power supplies. Creating HEMT power devices based on GaN-on-Si, per se, is a game-changing innovation. Infineon tops it by delivering in addition the perfectly matching GaN EiceDRIVER™ series of single-channel functional and reinforced isolated gate driver ICs.

Infineon is in the unique position to fully own the entire supply chain (incl. a high-volume fab for economies of scale), now mastering all currently available semiconductor technologies (Si, SiC, GaN, GaN-on-Si). Customers receive unbiased consultancy and offers tailored to their needs and their application profiles.

Targeting: high-power SMPS applications (industrial, telecom, hyperscale datacenters, server)

EBV - Infineon GAN Tabs

Complete system solutions
CoolGaN™ 600 V e-mode HEMTs
GaN EiceDRIVER™ gate driver ICs
Simulation, trainings and evaluation boards

High-efficiency GaN switched-mode power supply (SMPS)

Image of 1EDi-G1 GaN Driver IC DIAGRAM

Click here to enlarge image

Full-bridge totem-pole PFC

High-voltage CoolGaN™

CoolGaN™ 600 V

IGO60R070D1

High-voltage SJ MOSFETs

CoolMOS™ C7/G7

Controller / Driver
PFC controller	CoolMOS™ CFD7 CoolMOS™ P7
LLC controller	ICE2HS01G
Single-channel isolated gate driver	1EDF5673F 1EDF5673K 1EDS5663H
Dual-channel isolated gate driver	2EDF7275

Related documents

Resonant LLC

High-voltage CoolGaN™

CoolGaN™ 600 V

IGO60R070D1

Synchronous rectification

Low -voltage MOSFETs

OptiMOS™ 5

GaN’s switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in³ for 3.6 kW LLC with >98% efficiency).

The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high-frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.

Watch video: hyper-scale computing enabled by Infineon

The CoolGaN™ concept has been designed for industrial applications (15+ years) and supports AC-DC, DC-DC and DC-AC conversion

Key features	Key benefits
Best FOM of 600-V-power devices Excellent for hard- and soft-switching topologies, and for high-frequency and high-power-density applications Optimized for turn-on and turn-off Zero reverse-recovery charge The cutting-edge technology for innovative solutions and high volumes Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22) (excl. IGT60R190D1S) Compared to Si technology: 10x higher breakdown field and 2x higher mobility 10x lower output charge 10x lower gate charge and linear C_oss characteristic	Highest efficiency for SMPS; excellent efficiency in resonant circuits Highest power density enables small and light weight designs SMD packaging ensures that switching capabilities of GaN are fully accessed Easy to use thanks to a compelling GaN EiceDRIVER™ gate driver IC portfolio for outstanding robustness and efficiency Very low R_DS(on) and large cost-down potential New topologies and current modulation Ultrafast (nearly lossless) switching Reduced EMI High-quality volume supply that enables faster time-to-market Reduced BOM and overall system cost

Key features

Key benefits

Best FOM of 600-V-power devices
Excellent for hard- and soft-switching topologies, and for high-frequency and high-power-density applications
Optimized for turn-on and turn-off
Zero reverse-recovery charge
The cutting-edge technology for innovative solutions and high volumes
Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22) (excl. IGT60R190D1S)

Compared to Si technology:

10x higher breakdown field and 2x higher mobility
10x lower output charge
10x lower gate charge and linear C_oss characteristic

Highest efficiency for SMPS; excellent efficiency in resonant circuits
Highest power density enables small and light weight designs
SMD packaging ensures that switching capabilities of GaN are fully accessed
Easy to use thanks to a compelling GaN EiceDRIVER™ gate driver IC portfolio for outstanding robustness and efficiency
Very low R_DS(on) and large cost-down potential
New topologies and current modulation
Ultrafast (nearly lossless) switching
Reduced EMI
High-quality volume supply that enables faster time-to-market
Reduced BOM and overall system cost

CoolGaN™ 600 V e-mode HEMTs product portfolio

R_{DS(on) max.}	DSO-20-85 Bottom-side cooling	DSO-20-87 Top-side cooling	HSOF-8-3 (TO-leadless)	LSON-8-1 (DFN 8x8)
35 mΩ
70 mΩ	IGO60R070D1**	IGOT60R070D1**	IGT60R070D1**	IGLD60R070D1**
190 mΩ			IGT60R190D1S*	IGLD60R190D1**

^{* Standard grade, ** Industrial grade}
Highlight: the newly launched IGLD60R190D1, a CoolGaN™ 600 V e-mode power transistor, comes in the smallest (8x8 mm) package within Infineon's GaN portfolio and is suitable for a broad power range. Being a match for multiple consumer and industrial applications, the optimized cost significantly lowers the technology entry barrier.

Driving enhancement mode GaN HEMTs, such as CoolGaN™, with non-isolated gate (diode input characteristic) and low threshold voltage, is different from driving Superjunction MOSFETs. Infineon’s dedicated GaN EiceDRIVER™ family of single-channel galvanically-isolated gate driver ICs with high gate current for fast turn-on and robust gate-drive topology optimizes the performance of CoolGaN™ devices. Additionally, driver complexity was significantly reduced (medium effort for design-in) and ease-of-use of the accompanied e-mode GaN HEMTs is ensured.

Key features	Key benefits
Output impedance: R_DS(on) source - 0.85 Ω R_DS(on) sink - 0.35 Ω Input-output propagation delay accuracy: -6 ns / +7 ns CMTI: > 150 V/ns Galvanic isolation Package: 1EDF5673K: 13-pin LGA 5x5 mm 1EDF5673F: 16-pin DSO 150 mil 1EDS5663H: 16-pin DSO 300 mil Placement: Totem-pole PFC Resonant LLC Pace: 18 ns minimum output pulse-width Precision: 13 ns propagation delay window Negative gate-drive voltage for the 1^st pulse	Complete support of all requirements specific to enhancement GaN HEMTs’ operation Switching behavior independent from the duty cycle Negative gate-driver voltage -> protection against spurious turn-on Two off-voltage levels -> least dead-time losses Excellent timing accuracy -> best system efficiency Constant switching transients -> least R&D effort Best robustness Integrated galvanic isolation for high power density of the application design excellent system-level timing accuracy robust common-mode transient immunity (CMTI) Reduced driver complexity and no need for customized drivers

Key features

Key benefits

Output impedance:
R_DS(on) source - 0.85 Ω
R_DS(on) sink - 0.35 Ω
Input-output propagation delay accuracy: -6 ns / +7 ns
CMTI: > 150 V/ns
Galvanic isolation
Package:
1EDF5673K: 13-pin LGA 5x5 mm
1EDF5673F: 16-pin DSO 150 mil
1EDS5663H: 16-pin DSO 300 mil
Placement:
Totem-pole PFC
Resonant LLC
Pace: 18 ns minimum output pulse-width
Precision: 13 ns propagation delay window
Negative gate-drive voltage for the 1^st pulse

Complete support of all requirements specific to enhancement GaN HEMTs’ operation
Switching behavior independent from the duty cycle
Negative gate-driver voltage -> protection against spurious turn-on
Two off-voltage levels -> least dead-time losses
Excellent timing accuracy -> best system efficiency
Constant switching transients -> least R&D effort
Best robustness
Integrated galvanic isolation for
high power density of the application design
excellent system-level timing accuracy
robust common-mode transient immunity (CMTI)
Reduced driver complexity and no need for customized drivers

High-voltage GaN driving

Image of High voltage GaN driving

GaN EiceDRIVER™ gate driver IC product portfolio

		Input to output isolation
	Package	Isolation class	Rating	Surge testing	Certification	Propagation delay accuracy	Typ. high level (sourcing) output resistance	Typ. low level (sinking) output resistance
1EDF5673K	13-pin LGA 5x5 mm	functional	V_IO = 1.5kV_DC	n.a.	n.a.	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm
1EDF5673F	13-pin LGA 5x5 mm	functional	V_IO = 1.5kV_DC	n.a.	n.a.	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm
1EDS5663H	13-pin LGA 5x5 mm	functional	V_IO = 1.5kV_DC	n.a.	n.a.	-6 ns /+7 ns	0.85 Ohm	0.35 Ohm

Simulation model for Infineon’s GaN e-mode HEMTS

Use the simulation model for a performance pre-evaluation of the following e-mode CoolGaN™ 600 V transistors: IGOT60R070D1, IGO60R070D1, IGT60R070D1, IGLD60R070D1, IGT60R190D1S

Trainings for power electronic engineers and designers

Training 1: Online course CoolGaN™ 600 V transistors
Training 2: Online course CoolGaN™ reliability and qualification basics
Training 3: Online course Si, SiC, GaN choose the right technology for different topologies
Training 4: Online course CoolGaN™ power transistors: Why are they used, where and when

Evaluation boards

Image	Board name & key components	Description & target applications	Key features & benefits
Application note! Study design guide Interactive 3D model	EVAL_2500W_PFC_GAN_A 2500 W full-bridge totem-pole power factor correction (PFC) evaluation board Infineon board components: CoolGaN™ 600 V e-mode HEMTs (IGO60R070D1) 650 V CoolMOS™ C7 Gold SJ MOSFET (IPT65R033G7) https://export.farnell.com/c/semiconductors-ics/power-management-ics-pmic/gate-drivers?st=1edi60n12afxuma1&showResults=true EiceDRIVER™ 1EDI Compact (1EDI20N12AF and 1EDI60N12AF) EiceDRIVER™ 2EDN (2EDN7523G or 2EDN7524F) Quasi-resonant CoolSET™ (ICE2QR2280G) CCM PFC controller (ICE3PCS01G)	This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers. The input voltage range of the board is between 90 to 265 V_AC, while the output voltage is 390 V_DC. All power components are surface mount devices (SMD) enabling faster and cheaper assembly process. Target applications: SMPS, server PSU and telecom rectifiers	Features: Flat efficiency >99% over a wide load range Benefits: Suitable reference design for high-efficiency, high-power density server PSU and telecom rectifiers Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies
Application note! Interactive 3D model	EVAL_1EDF_G1_HB_GAN CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Infineon board components: CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1) GaN EiceDRIVER™ (1EDF5673K)	The board features a half-bridge of 70 mΩ GaN power transistors, and a pair of EiceDRIVER™ GaN gate drivers along with input logic that provides adjustable dead-time. Using an external inductor, the board can be configured for buck- or boost-mode, double-pulse testing or continuous PWM operation, hard- or soft-switching. Operating frequency can be up to several MHz. Power electronic engineers and designers may investigate similarities and differences of GaN power transistors compared to their silicon counterparts. Target application: evaluation of GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications	Features: Simple GaN half-bridge with dedicated GaN driver ICs Capable of multi-MHz switching frequencies Zero reverse-recovery – can shift between hard or soft-switching GaN transistors feature top-side cooling for high power dissipation Qualification: industrial Benefits: Easy setup and use Multiple configurations possible Evaluate high-frequency capabilities of GaN Evaluate waveforms with low ringing, overshoot and EMI Enables easy evaluation at multi-kilowatt power levels

Image

Board name & key components

Description & target applications

Key features & benefits

Image of EVAL_2500W_PFC_GAN_A board

Application note!

Study design guide

Interactive 3D model

EVAL_2500W_PFC_GAN_A

2500 W full-bridge totem-pole power factor correction (PFC) evaluation board

Infineon board components:

CoolGaN™ 600 V e-mode HEMTs (IGO60R070D1)
650 V CoolMOS™ C7 Gold SJ MOSFET (IPT65R033G7)
https://export.farnell.com/c/semiconductors-ics/power-management-ics-pmic/gate-drivers?st=1edi60n12afxuma1&showResults=true
EiceDRIVER™ 1EDI Compact (1EDI20N12AF and 1EDI60N12AF)
EiceDRIVER™ 2EDN (2EDN7523G or 2EDN7524F)
Quasi-resonant CoolSET™ (ICE2QR2280G)
CCM PFC controller (ICE3PCS01G)

This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers.

The input voltage range of the board is between 90 to 265 V_AC, while the output voltage is 390 V_DC. All power components are surface mount devices (SMD) enabling faster and cheaper assembly process.

Target applications: SMPS, server PSU and telecom rectifiers

Features:

Flat efficiency >99% over a wide load range

Benefits:

Suitable reference design for high-efficiency, high-power density server PSU and telecom rectifiers
Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies

Image of EVAL_HB_BC_1EDN8550 board

Application note!

Interactive 3D model

EVAL_1EDF_G1_HB_GAN

CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

Infineon board components:

CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
GaN EiceDRIVER™ (1EDF5673K)

The board features a half-bridge of 70 mΩ GaN power transistors, and a pair of EiceDRIVER™ GaN gate drivers along with input logic that provides adjustable dead-time. Using an external inductor, the board can be configured for buck- or boost-mode, double-pulse testing or continuous PWM operation, hard- or soft-switching. Operating frequency can be up to several MHz. Power electronic engineers and designers may investigate similarities and differences of GaN power transistors compared to their silicon counterparts.

Target application: evaluation of GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications

Features: