High efficiency at optimal price-performance ratio for the next level of charging
Wireless charging uses electromagnetic fields to transfer power from a transmitter to a receiver to charge the battery of the user device, erasing the need for physical connectors and cables to transfer power. Infineon offers a variety of innovative components to develop highly reliable and efficient solutions for the transmitter and adapter/charger parts of a wireless charging system.
Enhance every wireless charging design with the right semiconductor solution from Infineon. As a member of the Wireless Power Consortium and the AirFuel Alliance, Infineon ensures that its products adhere to the key requirements of the dominant market standards : inductive (AirFuel and Qi (WPC)) and resonant (AirFuel). Take a look at an overview of cutting-edge solutions from Infineon’s comprehensive portfolio of high-quality semiconductors.
Key Advantages
- Easy charging without plug in your device
- Charging in public places or in the car
- Charging several devices at the same time
- No tangled wires and damaged cables
- No more different chargers
Components for inductive (AirFuel and Qi) and low switching frequency transmitter solutions
Infineon’s optimized 30 V inverter MOSFETs are the perfect fit for low switching frequency transmitter solutions. A reliable and mature silicon technology OptiMOS™ in tiny PQFN packages enable high efficiency levels in wireless power transmitter designs. The products feature excellent RDS(on) and outstanding charge characteristics with high power density, which makes them perfect for small and slim designs.
Multi-coil solutions require coil selection switches to bring the power to where it is needed. For such uses, in addition to its OptiMOS™ products, Infineon offers power dense IR MOSFET™ devices in 2x2 mm and 3.3 x 3.3 mm packages, ready to use.
Components for resonant (AirFuel) and high switching frequency transmitter solutions
Infineon provides leading products in the industry when it comes to fast switching and has the best figure-of-merit for gate charge times RDS(on) and for Coss , which allows you to achieve 6.78 MHz inverter designs using robust silicon MOSFET technology.
Infineon offers superior power MOSFET technology especially in the 30 V-100 V areas for class D inverter designs, and in the 150 V-250 V voltage class, for class E inverter to address MHz switching implementations. If your transmitter design uses a pre-regulator (buck or buck/boost) to control the input voltage of your amplifier, you can find OptiMOS™ solutions in the 20 V-400 V MOSFETs section.
In addition to the inverter MOSFET solutions, Infineon offers the “coolest” driver ICs in the industry, EiceDRIVER™ 1EDN, already available as low side drivers for class E implementations and soon as level shifted half-bridge driver for class D topologies.
In addition to the inverter MOSFET solutions, Infineon offers the “coolest” driver ICs in the industry, EiceDRIVER™ 1EDN, already available as low side drivers for class E implementations and soon as level shifted half-bridge driver for class D topologies.
Still not sure which product is the right fit for your design? Find the right solutions for your wireless charging designs in 4 steps
Infineon’s selection tool for wireless charging designs that allows you to find the right solutions for your designs in just 4 steps. Select the application, power range, standard and the topology you want to apply and get an overview of Infineon’s most recommended offerings for your design.
