Broadcom & Nexperia – Building bridges for the best solution
Nexperia’s 650V 33mOhm GaN FET & Broadcom’s ACFJ-3262
This is a half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262.
The evaluation board uses a dual-channel ACFJ-3262 to drive both top and bottom bridge GaN FETs directly. Each channel of the ACFJ-3262 has two outputs to turn-on and off the GaN efficiently and reliably. The ACFJ-3262 has an UVLO of less than 10V, which is suitable for the 12V VGS operation of the GaN FET. It has more than 100kV/µs of noise immunity for fast switching dv/dt.
The GAN039-650NBB is a 650 V, 33 mΩ GaN FET in a CCPAK1212 package. It is a normally off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability and performance.
Features
- ACFJ-3262, 10A dual-channel isolated gate drive optocoupler
- GAN039-650NBB, 650 V, 33 mΩ GaN FET
- Double pulse test for high slew rate dv/dt and Eon/Eoff performance
Applications
- Renewable energy inverters
- Industrial power supplies
EVALUATION BOARD GUIDE - CLICK HERE
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Knowledge library – Nexperia & Broadcom
All you need to know about Nexperia’s GaN FETs and Broadcom's gate drive optocoupler - Performance, efficiency, reliability
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EBV - Broadcom and Nexperia Intro Static HTML
