Broadcom & Nexperia – Building bridges for the best solution
Nexperia’s 650V 33mOhm GaN FET & Broadcom’s ACFJ-3262
This is a half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262.
The evaluation board uses a dual-channel ACFJ-3262 to drive both top and bottom bridge GaN FETs directly. Each channel of the ACFJ-3262 has two outputs to turn-on and off the GaN efficiently and reliably. The ACFJ-3262 has an UVLO of less than 10V, which is suitable for the 12V VGS operation of the GaN FET. It has more than 100kV/µs of noise immunity for fast switching dv/dt.
The GAN039-650NBB is a 650 V, 33 mΩ GaN FET in a CCPAK1212 package. It is a normally off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability and performance.
Features
- ACFJ-3262, 10A dual-channel isolated gate drive optocoupler
- GAN039-650NBB, 650 V, 33 mΩ GaN FET
- Double pulse test for high slew rate dv/dt and Eon/Eoff performance
Applications
- Renewable energy inverters
- Industrial power supplies
EVALUATION BOARD GUIDE - CLICK HERE
Don't miss the chance to win one of 50 half bridge evaluation boards from Nexperia and Broadcom. All you have to do is fill out the form and with a little luck you will receive an email from us soon. Good luck!
Knowledge library – Nexperia & Broadcom
All you need to know about Nexperia’s GaN FETs and Broadcom's gate drive optocoupler - Performance, efficiency, reliability
- Brochure: Nexperia GaN FETs - Performance, efficiency, reliability
- Blog post: Power GaN: the need for efficient power conversion
- Video: Driving Nexperia GaN with Broadcom optocouplers
- Video: Nexperia GaN FETs
- Video: Using power GaN FETs in AC/DC converters - Quick learning
- Press release: Nexperia launches high-efficiency GaN FET with industry-leading performance
- Whitepaper: Power GaN technology: the need for efficient power conversion
Broadcom
ACFJ-3262
The ACFJ-3262 is a 10 A dual-channel gate drive optocoupler device in the SO-24 package designed for high voltage, space constrained industrial applications
Nexperia
GAN041-650WSB
GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost. GAN041-650WSB is a 650 V, 35 mΩ GaN FET in a TO-247 package.
Nexperia
GAN063-650WSA
GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride FET in the industry recognizable TO-247 package.
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