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Going Green?

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Protect with Broadcom optocouplers

Are you on the Green side?

Are you working on a Green application like solar, wind or energy storage?

Do you need to protect your system – with electrical and signal isolation?

Does your system have the latest, most efficient SiC/GaN power switches?

Going Green – Protect with Broadcom Optocouplers

Drive SiC/GaN inverters more efficiently
Reduce copper losses by providing high insulation voltage
Consume less power during current sensing and data transmission

Broadcom optocouplers are the ideal fit for an array of green applications ranging from solar and wind inverters, energy storage, automotive electric vehicles and charging and power supplies.

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The Green ADVANTAGE:

Drive inverters more efficiently
Reduce copper losses by providing high insulation voltage
Consume less power during current sensing and data transmission

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Protect with Broadcom Optocouplers

Learn how Broadcom can support you with your green energy applications

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Enabling green energy applications

Gate drivers for driving power switches like IGBT, SiC and GaN
Isolation amplifiers for phase current and bus voltage measurements
High speed digital optocouplers for data transmission and communication

Optocouplers benefits

Electrical insulation and signal isolation
Eliminate the effects of electrical noise caused by crosstalk, power glitches and electrical interference
High voltage isolation allowing safe interface between high and low voltages in electrical circuits

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On-demand webinars

Podcast

This episode of Passion for Technology introduces to the world of SiC and GaN semiconductors. What are these new materials and what are they used for are just two of the questions answered by our interview guests Lisa Dietrich, Senior Industrial Field Application Engineer at Broadcom and Karl Lehnhoff, Director of the Industrial Segment at EBV Elektronik.

White Papers

Don‘t risk eroneous switching with SiC and GaN power devices – Use optical isolation

High switching speeds in smaller industrial equipment will require superior CMR and EMI performance that only optical technology can offer. Broadcom gate drive optocouplers are used extensively in driving silicon-based semiconductors like IGBT and power MOSFETs. Optocouplers are used to provide reinforced galvanic insulation between the control circuits from the high voltages and the power semiconductors. The ability to reject high common mode noise (CMR) will prevent erroneous driving of the power semiconductors during high frequency switching. This paper describes how the next generation of gate drive optocouplers can be used to protect and drive SiC MOSFETs.

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Be prepared! New standards are driving the need for higher insulation ratings in power electronics

Make sure your design complies with the new standards for power drives (IEC 61800-5)

ACNT-H Family of devices.

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Green Energy Conversion: Protect with Broadcom isolators

Broadcom optocouplers are used in an array of green applications ranging from solar and wind inverters, energy storage, automotive electric vehicles and charging and power supplies. The primary purpose of an optocoupler is to provide both electrical insulation and signal isolation. Optocouplers eliminate the effects of electrical noise caused by crosstalk, power glitches and electrical interference. They provide high voltage isolation allowing safe interface between high and low voltages in electrical circuits.

Broadcom’s key optocoupler products include gate drivers for driving power switches like IGBT, SiC and GaN, isolation amplifiers for phase current and bus voltage measurements, high speed digital optocoupler for data transmission and communication.

The popularity of Broadcom optocouplers in these green applications is due to their ability to drive inverters more efficiently, to reduce copper losses by providing high insulation voltage and to consume less power during current sensing and data transmission.

Related products

10A Gate Driver

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Make Green Energy Go Further with Stronger, Faster Optical Isolators

The latest design trends in green power are driving efficiency to levels beyond 99%. Find out how EBV’s portfolio of Broadcom optical gate drivers, sensing amplifiers, and data couplers are handling the challenge.

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Broadcom Driver Board for Infineon DUAL 1B SiC Module

Features 10A Smart Gate Drive, Voltage and Current Sense Optocouplers

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Nexperia 650V 33mOhm GaN FET – ACFJ-3262

Half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262

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If you need any assistance, please click below to find your closest EBV sales office.

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Power Efficiency that Drives the Future

Over the last couple of years new innovative semiconductor technologies emerged that generate a paradigm shift in the power management market. Silicon carbide (SiC) and gallium nitride (GaN) now offer much more efficient power conversion properties.

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Broadcom

ACPL-355JC

The ACPL-355JC is a 10A gate drive optocoupler device with an integrated fail-safe IGBT and SiC MOSFET diagnostics, protection and fault reporting

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Broadcom

ACFL-3161

The ACFL-3161 is a 10 A gate drive optocoupler device in the SSO-12 package designed for high-voltage, space-constrained industrial applications

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Broadcom

ACFL-3161T – Coming Soon!

Automotive Qualified 10A Gate drive optocoupler. Contact your EBV Sales Representative for more information.

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Broadcom

ACFJ-3262

The ACFJ-3262 is a 10 A dual-channel gate drive optocoupler device in the SO-24 package designed for high voltage, space constrained industrial applications

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Nexperia 650V 33mOhm GaN FET – ACFJ-3262

This is a half-bridge evaluation board featuring Nexperia GaN FET, GAN039-650NBB and 10A gate drive optocoupler, ACFJ-3262.

The evaluation board uses a dual-channel ACFJ-3262 to drive both top and bottom bridge GaN FETs directly. Each channel of the ACFJ-3262 has two outputs to turn-on and off the GaN efficiently and reliably. The ACFJ-3262 has an UVLO of less than 10V, which is suitable for the 12V VGS operation of the GaN FET. It has more than 100kV/µs of noise immunity for fast switching dv/dt.

The GAN039-650NBB is a 650 V, 33 mΩ GaN FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability and performance.

For evaluation board support, please drop us an email at: optocoupler-enquiry.pdl@broadcom.com

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