onsemi Silicon Carbide (SiC) Combo JFETs | UG4SC075005L8S
Silicon Carbide (SiC) Combo JFET - EliteSiC, 5.0 mohm, 750V, TOLL
The UG4SC075005L8S "Combo-JFET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TOLL package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.
End products: Circuit breaker, battery charger, solar, energy storage system, industrial power supply
Key features
- Single digit RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+FETs)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- Short circuit rated
Applications
- Solid state / Semiconductor circuit breaker
- Solid state / Semiconductor relay
- Battery disconnects
- Surge protection
- Inrush current control
- High power switch mode converters (>25 kW)
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onsemi SiC JFETs
SiC Junction Field-Effect Transistor (JFET) is a compelling technology for fast growing markets positioned to gain share from Silicon based super-junction (SJ) MOSFETs and other semiconductor solutions such as GAN in the industrial end-market.