Vishay SiHA5N80AE

Vishay's 800 V third generation E Series Power MOSFET uses a higher density and efficient new processes and includes an integrated ESD protection circuit (450 to 2800 mΩ), with HBM much larger than 2.5 kV. The new family of devices offers optimized output capacitance to reduce E_OSS and Q_OSS, with an excellent R_DS(ON) x Qg (Figure of Merit, FOM).

Key features

• Low R_DS(ON) x Q_g Figure of Merit
• Low effective capacitance (C_ISS)
• Reduced switching and conduction losses
• Integrated ESD protection circuit (450 to 2800 mΩ), HBM >> 2.5kV.

Additional features

• Low R_DS(ON) x Q_g (Figure of Merit, FOM)
• Low effective capacitance (V_DS = 0 to 480 V, V_GS = 0 V):
  • Effective capacitance, energy-related (C_O(ER)) = 14 pF
  • Effective capacitance, time-related (C_O(TR)) = 71 pF
• Ultra-low gate charge:
  • Q_g = 16.5 nC (max)
• Reduced switching and conduction losses
• Avalanche energy rated (UIS tested)
• Integrated Zener diode ESD protection:
  • HBM >> 2.5kV.
• Package: Thin-Lead TO-220 FULLPAK
• RoHS compliant
• Pb-free and halogen-free

Applications

• Server and telecom power supplies
• High-intensity discharge (HID)
• Fluorescent ballast lighting
• Industrial
• Welding
• Induction heating
• Motor drives
• Battery chargers
• Renewable energy

Available tools

• Calculator and Parametric Search:
  • https://www.vishay.com/product?docid=92373&tab=designtools-ppg