Vishay K857PE
Industry’s first 4-quadrant silicon PIN photodiode in surface-mount package
Vishay Semiconductors K857PE Si PIN Photodiode is a 4-quadrant photodetector with a 1.6 mm2/quadrant active area available in a surface-mount package. This photodiode functions in epitaxial technology and offers high photosensitivity. The K857PE pin photodiode operates at -40 °C to 110 °C temperature range, 20 V reverse voltage, and 1 nA dark current. This photodiode offers 1.3 V maximum forward voltage, 840 nm peak sensitivity wavelength, and 30 ns rise time and fall time.
Key features
- 1.6 mm2/quadrant active area available in a surface-mount package
- Functions in epitaxial technology and offers high photo sensitivity
- Operates at -40 to 110 °C temperature range
- 1.3 V maximum forward voltage, 840 nm peak sensitivity wavelength, 30 ns rise / fall time
Additional features
- 20 V reverse voltage
- -40 °C to 110 °C operating and storage temperature range
- 1 nA dark current
- 1.3 V maximum forward voltage
- 840 nm peak wavelength
- 30 ns rise time and fall time
- 260 °C soldering temperature
Applications
- Rain/light/tunnel sensing - sun tracking
- Laser beam alignment - docking system
- Virtual reality
- 3D model available at:
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