Infineon I CoolSiC™ - Empowering the Next Era of High-performance Power Conversion Systems

18 Sep 2024 - 18 Sep 2024

Online Webinar, EMEA

Date and Time:

• September 18, 2024, 09:00 CEST

Overview

Silicon carbide is an essential element to reach decarbonization targets and is at the core to reach even higher energy efficiency levels in various applications – including beyond the electric vehicle. Given its broad application field, SiC demand for power devices remains high and places importance on choosing the right partner to ramp up production and shape the future.

Join us in this webinar where we will explain what you should look out for when choosing SiC devices, present our newly introduced CoolSiC™ MOSFET G2, and offer a sneak peek of what we have planned for the future relating to SiC.

Silicon carbide has transformed the power electronics world and received considerable attention in the recent past. The electrification of cars and the required charging infrastructure have spurred the growth of SiC based products and placed a spotlight on the way society needs to generate and store energy in a sustainable way. New application and developing trends in existing systems require more granular portfolios, e.g. extending blocking voltage classes downwards and upwards from the established categories.

While the product range is broadening day by day, it is important to choose components smartly to ensure designing in the most efficient and future-proven way. As such aspects beyond the product features in the data sheet need to be considered and well understood. One prominent example is the impact of modern package technologies on the performance in the final application.

On top of choosing products that are the best fit for your design, it is also about choosing a reliable partner that supports the foreseeable strong growth of SiC in incumbent applications as well as paving the way for future markets.

Key Takeaways

• Understand what is important when it comes to choosing SiC devices
• Learn about the benefits of Infineon's new CoolSiC™ MOSFET G2
• Enjoy a sneak peek about what is coming up next in our world of SiC

Speakers

Dr. Peter Friedrichs, Fellow Silicon Carbide Innovation & Industrialization, Infineon Technologies
Dr. Peter Friedrichs received his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993 and finished his Ph.D thesis at the Fraunhofer Institute FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC. In 1996 he joined the Siemens AG and was involved in the development of power devices on SiC. Friedrichs joined SiCED GmbH & Co. KG, a joint venture of Siemens and Infineon, in March 2000. Since July 2004 he was the managing director of SiCED, and in 2009 achieved the Dipl.-Wirt.-Ing. From the University of Hagen. After the integration of SiCED's activities into Infineon he joined Infineon Technologies AG in April, 2011.
 

Eva Gabriel, Director Silicon Carbide Division, Infineon Technologies
Eva Gabriel has focused in her 11 years at Infineon on high voltage power conversion products for industrial and automotive applications. She has worked several years as product marketing manager on product definition and market introduction of high performance HV MOSFETs based on silicon and silicon carbide. Today she is responsible in the Green Industrial power division for driving the SiC marketing strategy execution.
 

Andrej Orel, Segment Manager City & Infrastructure, EBV Elektronik
Andrej Orel joined EBV Elektronik in 1997 as a field application engineer. Since 2006 he was taking different roles as regional application manager and business development manager and in 2019 taking over as a segment manager the segment called City & Infrastructure focused on smart city, energy, smart grid and infrastructure topics. Andrej holds an electrical engineering degree in electronics and telecommunications from the University of Ljubljana, Slovenija.

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