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EBV - Wide Bandgap Technology - ST Hero Banner (HB)

Wide Bandgap Technology

EBV - Wide Bandgap - ST - SiC MOSFETs (SN)

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STMicroelectronics STPOWER SiC MOSFETs

The real breakthrough in high voltage switching

Based on the advanced and innovative properties of wide bandgap materials, ST’s STPOWER SiC MOSFETs feature very low R_DS(on) per area, with the new SCT*N65G2 650 V and the new SCT*N120G2 1200 V product family, combined with excellent switching performance, reserve efficient and compact designs. These new families feature the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems.

SiC MOSFETs in mass production

EBV - Wideband - STMicroelectronics - SiC MOSFET Tabs

650V Gen2
1200V Gen2
1200 and 1700V Gen1

650V Gen2 SiC MOSFET P/N	V_DS [V]	R_DS(on) Typ @ 25 ºC [Ω] (Vgs=18V)	Id [A]	Package (Status/ DS )
				HiP247	HiP247-LL	HiP247-4LL	H2PAK-7L	PowerFLAT 8x8 HV	HU3PAK
				Tj max= 200°C			Tj max= 175°C	Tj max= 175°C
SCTW90N65G2V	650	0.018	119	Production / DataSheet Released
SCTWA90N65G2V					Production / DataSheet Released
SCTWA90N65G2V-4						Production / DataSheet Released
SCTH90N65G2V-7							Production / DataSheet Released
SCTL90N65G2V								Production / DataSheet Released
SCTW35N65G2V	650	0.55	45	Production / DataSheet Released
SCTWA35N65G2V					Production / DataSheet Released
SCTWA35N65G2V-4						Production / DataSheet Released
SCTH35N65G2V-7							Production / DataSheet Released
SCTL35N65G2V								Production / DataSheet Released

1200V Gen2 SiC P/N	V_DS [V]	R_DS(on) Typ @ 25 ºC [Ω] (Vgs=18V) series	Id [A]	Package (Status/ DS )
				HiP247	HiP247-4LL	H2PAK-7L	HU3PAK
				Tj max= 200°C		Tj max= 175°C
SCTW70N120G2V	1200V	0.021	80	Production / DataSheet Released
SCTWA70N120G2V-4					Production / DataSheet Released
SCTH70N120G2V-7						Production / DataSheet Released
SCTW60N120G2		0.040	52	Production / DataSheet Released
SCTWA60N120G2-4					Production / DataSheet Released
SCTH60N120G2-7						Production / DataSheet Released
SCTW40N120G2V		0.070	40	Production / DataSheet Released
SCTWA40N120G2V-4					Production / DataSheet Released
SCTH40N120G2V-7						Production / DataSheet Released

1200 & 1700V Gen1 SiC MOSFET P/N	V_DS [V]	R_DS(on) Typ @ 25 ºC [Ω] (Vgs=20V)	Id [A]	Package (Status/ DS )
				HiP247	HiP247-LL	HiP247-4LL	H2PAK-2L	H2PAK-7L	HU3PAK
				Tj max= 200°C			Tj max= 175°C	Tj max= 175°C
SCT50N120	1200	0.052	65	Production / DataSheet Released
SCTWA50N120					Production / DataSheet Released
SCTWA50N120-4						Production / DataSheet Released
SCT30N120		0.080	40	Production / DataSheet Released
SCTWA30N120					Production / DataSheet Released
SCT30N120H							Production / DataSheet Released
SCT20N120		0.169	20	Production / DataSheet Released
SCTWA20N120					Production / DataSheet Released
SCT20N120H							Production / DataSheet Released
SCT10N120		0.520	10	Production / DataSheet Released
SCTWA10N120		0.520	10		Production / DataSheet Released
SCT1000N170	1700V	1000	6	Production / DataSheet Released
SCT20N170	1700V	0.064	25	Production / DataSheet Released

The best R_ds(on) vs Qg trade-off

EBV - Wide Bandgap - ST Available Packages Static HTML

Available packages

PowerFLAT 8x8 HV

H2PAK-7

HiP247 long leads

HiP247

HiP247-4

HU3PAK

Product highlight

EBV - Wide Bandgap Technology - ST STGAP2SICS Mixed Media (MM)

STGAP2SICS

Galvanically isolated 4 A single gate driver for SiC MOSFETs

The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.

DOWNLOAD DATASHEET

BUY NOW

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Evaluation boards

EBV - Wide Bandgap - ST - STDES-VRECTFD (MM)

STDES-VRECTFD

15 kW, three-level, three-phase Vienna rectifier with digital control for power factor correction

data brief

EBV - Wide Bandgap Technology - ST STEVAL-DPSTPFC1 Mixed Media (MM)

STEVAL-DPSTPFC1

3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V

data brief

STEVAL-ISA211V1 - Mixed Media (MM)

STEVAL-ISA211V1

100 W, ultra-wide range flyback converter based on L6566BH.

data brief

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Resource

EBV - Wide Bandgap Technology - ST MOSFET Finder Mixed Media (MM)

SiC MOSFET Finder

The STPOWER MOSFET finder is a mobile application available for Android or iOS offering a user-friendly alternative to searching through the ST online product portfolio, driving the user along a smooth and simple navigation experience using portable devices.

Download datasheet

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Silicon & Wide-bandgap power technology positioning

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SiC MOSFET series positioning

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EBV - Wide Bandgap - ST - EV Charging (GBL)

STMicroelectronics Solutions for EV Charging

STMicroelectronics can be your preferred supplier offering a wide range of power discretes including silicon-carbide (SiC) and silicon power MOSFETs and diodes to help develop high-efficiency, high-power density DC charging stations.

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