STMicroelectronics STPOWER SiC MOSFETs
The real breakthrough in high voltage switching
Based on the advanced and innovative properties of wide bandgap materials, ST’s STPOWER SiC MOSFETs feature very low RDS(on) per area, with the new SCT*N65G2 650 V and the new SCT*N120G2 1200 V product family, combined with excellent switching performance, reserve efficient and compact designs. These new families feature the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems.
SiC MOSFETs in mass production
- 650V Gen2
- 1200V Gen2
- 1200 and 1700V Gen1
| 650V Gen2 SiC MOSFET P/N |
VDS [V] | RDS(on) Typ @ 25 ºC [Ω] (Vgs=18V) |
Id [A] | Package (Status/ DS ) | |||||
|---|---|---|---|---|---|---|---|---|---|
| HiP247 | HiP247-LL | HiP247-4LL | H2PAK-7L | PowerFLAT 8x8 HV |
HU3PAK | ||||
| Tj max= 200°C | Tj max= 175°C |
Tj max= 175°C |
|||||||
| SCTW90N65G2V | 650 | 0.018 | 119 | BUY NOW | |||||
| SCTWA90N65G2V | BUY NOW | ||||||||
| SCTWA90N65G2V-4 | BUY NOW | ||||||||
| SCTH90N65G2V-7 | BUY NOW | ||||||||
| SCTL90N65G2V | BUY NOW | ||||||||
| SCTW35N65G2V | 650 | 0.55 | 45 | BUY NOW | |||||
| SCTWA35N65G2V | BUY NOW | ||||||||
| SCTWA35N65G2V-4 | BUY NOW | ||||||||
| SCTH35N65G2V-7 | BUY NOW | ||||||||
| SCTL35N65G2V | BUY NOW | ||||||||
| 1200V Gen2 SiC P/N | VDS [V] | RDS(on) Typ @ 25 ºC [Ω] (Vgs=18V) series |
Id [A] | Package (Status/ DS ) | |||
|---|---|---|---|---|---|---|---|
| HiP247 | HiP247-4LL | H2PAK-7L | HU3PAK | ||||
| Tj max= 200°C | Tj max= 175°C |
||||||
| SCTW70N120G2V | 1200V | 0.021 | 80 | BUY NOW | |||
| SCTWA70N120G2V-4 | BUY NOW | ||||||
| SCTH70N120G2V-7 | BUY NOW | ||||||
| SCTW60N120G2 | 0.040 | 52 | BUY NOW | ||||
| SCTWA60N120G2-4 | BUY NOW | ||||||
| SCTH60N120G2-7 | BUY NOW | ||||||
| SCTW40N120G2V | 0.070 | 40 | BUY NOW | ||||
| SCTWA40N120G2V-4 | BUY NOW | ||||||
| SCTH40N120G2V-7 | BUY NOW | ||||||
| 1200 & 1700V Gen1 SiC MOSFET P/N |
VDS [V] | RDS(on) Typ @ 25 ºC [Ω] (Vgs=20V) |
Id [A] | Package (Status/ DS ) | |||||
|---|---|---|---|---|---|---|---|---|---|
| HiP247 | HiP247-LL | HiP247-4LL | H2PAK-2L | H2PAK-7L | HU3PAK | ||||
| Tj max= 200°C | Tj max= 175°C |
Tj max= 175°C |
|||||||
| SCT50N120 | 1200 | 0.052 | 65 | BUY NOW | |||||
| SCTWA50N120 | BUY NOW | ||||||||
| SCTWA50N120-4 | Production / DataSheet Released |
||||||||
| SCT30N120 | 0.080 | 40 | BUY NOW | ||||||
| SCTWA30N120 | BUY NOW | ||||||||
| SCT30N120H | BUY NOW | ||||||||
| SCT20N120 | 0.169 | 20 | BUY NOW | ||||||
| SCTWA20N120 | BUY NOW | ||||||||
| SCT20N120H | BUY NOW | ||||||||
| SCT10N120 | 0.520 | 10 | BUY NOW | ||||||
| SCTWA10N120 | BUY NOW | ||||||||
| SCT1000N170 | 1700V | 1000 | 6 | BUY NOW | |||||
| SCT20N170 | 0.064 | 25 | BUY NOW | ||||||
The best Rds(on) vs Qg trade-off
STGAP2SICS
Galvanically isolated 4 A single gate driver for SiC MOSFETs
The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.
BUY NOW
STDES-VRECTFD
15 kW, three-level, three-phase Vienna rectifier with digital control for power factor correction
data brief
STEVAL-DPSTPFC1
3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V
data brief
SiC MOSFET Finder
The STPOWER MOSFET finder is a mobile application available for Android or iOS offering a user-friendly alternative to searching through the ST online product portfolio, driving the user along a smooth and simple navigation experience using portable devices.
Download datasheet
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
STMicroelectronics Solutions for EV Charging
STMicroelectronics can be your preferred supplier offering a wide range of power discretes including silicon-carbide (SiC) and silicon power MOSFETs and diodes to help develop high-efficiency, high-power density DC charging stations.