STPOWER SiC MOSFETS & DIODES
STPOWER SiC MOSFETs and Diodes brings now the advantages of the innovative wide bandgap materials (WBG) to your next design. ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms feature excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. Thanks to the excellent activities done by ST Silicon Carbide experts, systems equipped with ST SiC MOSFET’s can benefit of the excellent quality reached, almost comparable with the traditional silicon technologies. ST SiC MOSFET’s will allow you to design more efficient and compact systems than ever.
ST SiC Diodes are available from 600 to 1200 V with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220. In addition, ST is continuously enlarging their product range with new and innovative packages like the slim and compact PowerFLAT 8x8. This family of devices are offering an excellent thermal performance, the new standard for high-voltage (HV) surface-mount (SMD) packages and are available for 650 V SiC Diodes from 4 A to 10 A.
The main features and benefits of our STPOWER SiC MOSFETs and SiC Diodes include:
SiC MOSFETs
- Automotive Grade (AG) qualified devices
- Very high temperature handling capability (max. TJ = 200 °C)
- Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
- Low on-state resistance over the temperature range
- Simple to drive
- Very fast and robust intrinsic body diode proved
- 7 Years Longevity program certified, To support customers design investments by ensuring 7 years minimum devices availability from the notification date.
SiC Diodes
- Industrial- and Automotive Grade (AG) qualified devices
- High temperature handling capability (max. TJ = 175 °C)
- Very low Forward Voltage Drop (VF) for 650 V (1.45 V – 1.75 V) and 1200 V (1.5 V) devices.
- Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequencies
Our STPOWER SiC MOSFET product offer is completed with the state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads) specifically designed for automotive and industrial applications. In addition ST offers all necessary companion devices like isolated gate drivers to complete your power design.
Blog Article
Decision-makers must wrestle with the “newness” of Silicon Carbide. The material itself was already available in powder form in the 1890s. However, we are now able to create entirely new transistors, and many wonder about the applications they enable. Managers must, therefore, explain to their hierarchy if SiC makes sense for their operations. The webinar will thus use the example of a power factor correction module.
Read article
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STMicroelectronics can be your preferred supplier offering a wide range of power discretes including silicon-carbide (SiC) and silicon power MOSFETs and diodes to help develop high-efficiency, high-power density DC charging stations.