Silicon carbide (SiC) diodes from ON Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- 650V, 1200V and 1700V available
- Ease of paralleling
- High surge current capacitance
- Max junction temperature 175°C
- No reverse recovery/no forward recovery
- Higher switching frequency
- Low forward voltage (VF)
- Positive temperature coefficient
- AEC-Q101 qualified and PPAP capable
Applications
- Automotive HEV-EV DC-DC converters
- Automotive HEV-EV onboard chargers
- Industrial power
- PFC
- Solar
- UPS
- Welding
| 650V SiC Diodes | 1200V SiC Diodes | 1700V SiC Diodes |
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Related Information
ON Semiconductor NDSH25170A Silicon Carbide Schottky Diode
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon.