Silicon carbide (SiC) diodes from ON Semiconductor

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

 

Features

• 650V, 1200V and 1700V available
• Ease of paralleling
• High surge current capacitance
• Max junction temperature 175°C
• No reverse recovery/no forward recovery
• Higher switching frequency
• Low forward voltage (VF)
• Positive temperature coefficient
• AEC-Q101 qualified and PPAP capable

 

Applications

• Automotive HEV-EV DC-DC converters
• Automotive HEV-EV onboard chargers
• Industrial power
• PFC
• Solar
• UPS
• Welding

 

650V SiC Diodes	1200V SiC Diodes	1700V SiC Diodes
FFSH2065B-F085 FFSM0665B FFSM0865B FFSM1065B FFSM2065B FFSB0465A FFSB0665A	FFSB10120A FFSB10120A-F085 FFSB20120A FFSB20120A-F085 FFSD08120A FFSD10120A FFSH10120A	NDSH25170A

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