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Wide Bandgap Technology

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Wide Bandgap Portfolio from ON Semiconductor

ON Semiconductor provides a full ecosystem of Wide Bandgap (WBG) devices powering high performance applications such as 5G communication, renewable energy, cloud computing, vehicle electrification and charging. ON Semiconductor is also contributing to the development of universal standards to help advance the adoption of Wide Bandgap (WBG) power technologies.

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This demo kit includes the versatile NCP51705SMDGEVB SIC MOSFET Driver evaluation board that enables prototyping in both existing and new designs. Also included are two SiC MOSFET samples. NTHL060N090SC1is a 900V, 60mΩ RDS(on) device and NTHL080N120SC1 is a 1200V, 80mΩ RDS(on) device. Both are housed in a robust TO247-3L package.

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Silicon Carbide SiC:

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600V, 1200V and 1700V Silicon Carbide Diodes

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon.

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GaN:

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650 V Half Bridge Gate Driver for GaN Power Switches - NCP51820

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies.

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900V and 1200V Silicon Carbide MOSFETs

Silicon Carbide Technology has a better thermal conductivity (3x) and a higher breakdown field strength (10x) over traditional Silicon technology.

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High Voltage Gate Driver:

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Galvanically Isolated Gate Drivers

ON Semiconductor Gate Drivers provide features and benefits that include High system efficiency high reliability, High Current Output.

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Single 6 A High-Speed, Low-Side SiC MOSFET Driver - NCP51705

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors, and can utilize its on−board charge pump to generate a selectable negative voltage rail.

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High Voltage Gate Driver:

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onsemi NCID9211 Ceramic Digital Isolator

The NCID9211 is part of a family of galvanically digital isolators that use patented off-chip capacitor isolation technology from onsemi.

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Read Application Note About the Difference Between GaN and SiC Transistors

These devices compete with the long−lived silicon power LDMOS MOSFETs and the super−junction MOSFETs. The GaN and SiC devices are similar in some ways but also have significant differences. This article compares the two and offers up some facts to help you make a decision for your next design.

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Watch Video on ON Semiconductor’s SiC Solutions for the Energy Infrastructure Market

The energy infrastructure market which consists of applications such as Solar Inverters, Energy Storage Systems, EV Charging Stations, and Uninterruptable power supplies is undergoing a transition to Silicon Carbide (SiC) power semiconductors from traditional silicon (Si) power semiconductors.

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Read Blog About How Wide Bandgap Technology Enables Future Solar Power Solutions

WBG materials have inherently lower resistance than Si-based devices, reducing static losses when conducting continuously. In addition, as switching frequencies rise to reduce the size of magnetic components WBG technology further improves efficiency as the gate charge is reduced compared to silicon, reducing the dynamic losses as well.

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Watch Video on Utilizing Wide Bandgap (WBG) in Solar & Renewable Energy Applications

307GW of Solar Panels have already been installed world wide. This number is expected to over 500GW by 2025 as much of the world is trending towards renewable energy. Silicon Carbide, is instrumental in these changes as it provides increased efficiency, reduced size, and lower energy cost.

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