When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. These devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. A substantially lower switching figure of merit (RDS(on) x QGD) and reverse recovery charge (Qrr), enable the high switching frequencies while delivering lower dissipation and more efficient power conversion.
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Featured applications:
- Solar Inverters
- High efficiency and high-power density power supplies
- Servo Drives
- Battery Chargers
Related links:
| GAN063-650WSA - Power GaN FET 650 V | ||
|---|---|---|
| VDS | 650 V | |
| VGS(th) typ | 3.9 V | |
| RDS(on) max | 60 mΩ | |
| RDS(on) typ | 50 mΩ | |
| Package | TO-247 (SOT429) | |
| EOSS | 15 μJ @ 400 V | |
| Qrr | 125 nC @ 400 V -1000 A/μS | |
| GAN041-650WSB - 2nd generation Power GaN FET 650 V | ||
|---|---|---|
 |
VDS | 650 V |
| VGS(th) typ | 3.9 V | |
| RDS(on) max | 41 mΩ | |
| RDS(on) typ | 35 mΩ | |
| Package | TO-247 (SOT429) | |
| EOSS | 17 μJ @ 400 V | |
| Qrr | 150 nC @ 400 V -1000 A/μS | |
Features and benefits
- Easy gate drive, low RDS(on) fast switching
- Excellent body diode (Low Vf), low Qrr
- High ruggedness
- Low dynamic RDS(on)
- Stable switching
- Rugged gate bounce immunity (Vth ~ 4 V)
Related links:
- GAN041-650WSB Datasheet
- GAN063-650WSA Datasheet
- White Paper 650 V GaN FET technology delivers the best efficiency, and the robustness needed for AEC-Q101 qualification
- White Paper Power GaN technology: the need for efficient power conversion
Nexperia Technology Hub – Visit us now!
Gallium Nitride (GaN)
When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. Our devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. With the development of CCPAK, our high-performance and robust technology gets ready to pave the way in HV package innovation.
MOSFET & GaN FET Application Handbook
A Power Design Engineer’s Guide – Get your free copy now!
Written by engineers – for engineers - we share expertise and learnings that our engineering teams have built up over many years of helping customers in a variety of sectors take their applications from initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs – including information necessary to solve common problems and avoid potential pitfalls – our belief is that the Handbook will become a ‘go-to’ reference for anybody tasked with delivering optimized power and small-signal switching, power conversion and power management.
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